2014
DOI: 10.1109/tpel.2013.2274464
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SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems

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Cited by 98 publications
(28 citation statements)
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“…In parallel, from 2010 and 2014 a slightly different SSCB approach is developed using SiC Static Induction Transistors (SIT), which have similar structure to normally-on JFET but smaller channel length, offering less conduction resistance and higher blocking voltage capabilities [9]. 400Vdc power distribution for data centres was the main application.…”
Section: Sic Based Solid State Protection Circuits: Literature Reviewmentioning
confidence: 99%
“…In parallel, from 2010 and 2014 a slightly different SSCB approach is developed using SiC Static Induction Transistors (SIT), which have similar structure to normally-on JFET but smaller channel length, offering less conduction resistance and higher blocking voltage capabilities [9]. 400Vdc power distribution for data centres was the main application.…”
Section: Sic Based Solid State Protection Circuits: Literature Reviewmentioning
confidence: 99%
“…The SSCB takes approximately 10 µs to respond to a short circuit fault. A SSCB using SiC static induction transistors (SITs) was investigated for 400V DC data center distribution systems in [21] [22]. SITs, which have the same structural configuration as JFETs except for a much shorter channel length, offer ultralow on-resistance.…”
Section: A Selection Of Sscb Semiconductor Switching Devicesmentioning
confidence: 99%
“…Most of the energy needs to be absorbed by MOVs or resistors. Nevertheless, novel gate drive techniques were reported to control the turn-off di/dt and thus the voltage stress on the semiconductor switch to allow it to absorb some part of the residual energy [22].…”
Section: Ssbc Snubber and Energy Absorption Circuitrymentioning
confidence: 99%
“…As a result, dc circuit breakers must have high-speed interruption performance within 10 ms [4,5]. DC circuit breakers are divided by design into mechanical devices [6][7][8], semiconductor devices [9,10], and hybrid devices [11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%