SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY

Starke, Ulrich; Bernhardt, J.; Schardt, J.; Heinz, K.

doi:10.1142/s0218625x99001256

Cited by 36 publications

(24 citation statements)

References 50 publications

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“…However, these reconstructions require either silicon adatoms 32 or the presence of additional environmental molecules such as H 2 or O 2 33 . Moreover, as brittle cleavage proceeds through thermodynamic energy balance, it is usually argued that the relevant surface energy is the as-cleaved surface energy 17 .…”

Section: Methodsmentioning

confidence: 99%

In situ stable crack growth at the micron scale

et al. 2017

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Grain boundaries typically dominate fracture toughness, strength and slow crack growth in ceramics. To improve these properties through mechanistically informed grain boundary engineering, precise measurement of the mechanical properties of individual boundaries is essential, although it is rarely achieved due to the complexity of the task. Here we present an approach to characterize fracture energy at the lengthscale of individual grain boundaries and demonstrate this capability with measurement of the surface energy of silicon carbide single crystals. We perform experiments using an in situ scanning electron microscopy-based double cantilever beam test, thus enabling viewing and measurement of stable crack growth directly. These experiments correlate well with our density functional theory calculations of the surface energy of the same silicon carbide plane. Subsequently, we measure the fracture energy for a bi-crystal of silicon carbide, diffusion bonded with a thin glassy layer.

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Section: Methodsmentioning

confidence: 99%

In situ stable crack growth at the micron scale

et al. 2017

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“…A majority of these studies dealt with the Si-rich [1][2][3][4][5][6][7][8][9][10] (3ϫ3) and (ͱ3ϫͱ3)R30°͑Refs. 6 -24͒ reconstructions on 4H-and 6H-SiC(0001), the (3ϫ3) reconstruction 5,25 on 6H-SiC(0001 ), and the oxygen induced silicate adlayer reconstructions on 4H-and 6H-SiC͕0001͖ surfaces.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces

et al. 2003

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We report on highly resolved core-level and valence-band photoemission spectroscopies of hydrogenated, unreconstructed 6H-SiC(0001) and (0001 ) using synchrotron radiation. In the C 1s core level spectra of 6H-SiC(0001 ) a chemically shifted surface component due to C-H bonds is observed at a binding energy (0.47Ϯ0.02) eV higher than that of the bulk line. The Si 2p core-level spectra of SiC (0001) suggest the presence of a surface component as well but a clear identification is hindered by a large Gaussian width, which is present in all spectra and which is consistent with values found in the literature. The effect of thermal hydrogen desorption was studied. On 6H-SiC(0001) the desorption of hydrogen at 700-750°C is accompanied by a simultaneous transformation to the Si-rich (ͱ3ϫͱ3)R30°reconstruction. On 6H-SiC(0001 ) first signs of hydrogen desorption, i.e., the formation of a dangling bond state in the fundamental band gap of SiC, are seen at temperatures around 670°C while the (1ϫ1) periodicity is conserved. At 950°C a (3ϫ3) reconstruction is formed. The formation of these reconstructions on thermally hydrogenated 6H-SiC (0001) and (0001 ) is discussed in the light of earlier studies of 6H-SiC͕0001͖ surfaces. It will be shown that by using the hydrogenated surfaces as a starting point it is possible to gain insight into how the (ͱ3ϫͱ3)R30°and (3ϫ3) reconstructions are formed on 6H-SiC(0001) and 6H-SiC(0001 ), respectively. This is due to the fact that only hydrogen-terminated 6H-SiC͕0001͖ surfaces possess a surface carbon to silicon ratio of 1:1.

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“…The present article illuminates recent advances in the understanding of the structure of such phases and their relation to certain growth modes [15]- [17] following up a previous review [18] within a SiC review volume [19]. After the introduction the paper reviews the crystal structure and its implication to basal plane surfaces as well as other orientations.…”

confidence: 92%

Atomic Structure of SiC Surfaces

Starke

2004

Silicon Carbide

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SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY

Cited by 36 publications

References 50 publications

In situ stable crack growth at the micron scale

In situ stable crack growth at the micron scale

Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces

Atomic Structure of SiC Surfaces

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