2022
DOI: 10.1016/j.synthmet.2022.117022
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Side chain engineering of [1]benzothieno[3,2-b]benzothiophene (BTBT)-based semiconductors for organic field-effect transistors

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Cited by 5 publications
(4 citation statements)
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“…In addition to this, annealing itself has a positive effect on reducing material defects [ 48 ]. Hence, the hole transport of the material and the hole mobility of the device can be significantly increased [ 49 , 50 , 51 , 52 ]. In addition to this, we compared the mobility of BTBT and related derivatives and compared the results with our results, as shown in Table 2 .…”
Section: Resultsmentioning
confidence: 99%
“…In addition to this, annealing itself has a positive effect on reducing material defects [ 48 ]. Hence, the hole transport of the material and the hole mobility of the device can be significantly increased [ 49 , 50 , 51 , 52 ]. In addition to this, we compared the mobility of BTBT and related derivatives and compared the results with our results, as shown in Table 2 .…”
Section: Resultsmentioning
confidence: 99%
“…[ 12 ] Over these years, the performance of OSCs and their OFETs has been continuously improved, with the high carrier mobilities of transistors ( µ ) > 1–10 cm 2 V −1 s −1 . [ 13 ] In addition to optimizing the molecular structures and characteristics of OSCs (typically main‐chain engineering and side‐chain engineering), [ 14–16 ] another key factor in developing high‐performance semiconductors and transistors is the processing technology. [ 17 ]…”
Section: Introductionmentioning
confidence: 99%
“…[12] Over these years, the performance of OSCs and their OFETs has been continuously improved, with the high carrier mobilities of transistors (µ) > 1-10 cm 2 V −1 s −1 . [13] In addition to optimizing the molecular structures and characteristics of OSCs (typically main-chain engineering and side-chain engineering), [14][15][16] another key factor in developing high-performance semiconductors and transistors is the processing technology. [17] It is well known that the electrical properties of OSCs not only depend on the molecular structures, but also are closely on the aggregation structures of the semiconductor thin films, resulting in two carrier transport modes: intramolecular band transport and intermolecular hopping transport.…”
mentioning
confidence: 99%
“…[15] Indeed, thienoacene-based derivatives, comprising fused rings in a ladder-type molecular structure, present a highly delocalized structure and low-lying highest occupied molecular orbital (HOMO) energy level, affording outstanding electrical performance and stability. [16][17][18][19][20][21][22][23] In addition, strong SÀ S and π-π intermolecular interactions of thienoacene-based derivatives have been known to enhance large intermolecular orbital overlap in the solid state and promote good charge transport characteristics. [24][25][26] Among thienoacene-based derivatives, dithieno[3,2-b : 2',3'd]thiophene (DTT)-based compounds are one of the promising candidates as active materials in high performance OFETs.…”
Section: Introductionmentioning
confidence: 99%