Side-gate modulation of critical current in mesoscopic Josephson junction

Mortensen, N. Asger; Bastian, G.

doi:10.1006/spmi.2000.0908

Superlattices and Microstructures

2000

DOI: 10.1006/spmi.2000.0908

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Side-gate modulation of critical current in mesoscopic Josephson junction

N. Asger Mortensen

G. Bastian

Abstract: We study the normal state conductance and the Josephson current in a superconductor-2DEG-superconductor structure where the size/shape of the 2DEG-region can be modified by an additional side-gate electrode. The considered transport properties follow from the retarded Green function which we compute by employing a tight-binding-like representation of the Hamiltonian in the 2DEG region. Our model studies offer a qualitative demonstration of the recently observed effects caused by side-gate modulation.

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Cited by 2 publications

References 27 publications

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Ballistic reflection at a side gate in a superconductor–semiconductor–superconductor structure

Bastian¹,

Takayanagi²

2001

Physica C: Superconductivity

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We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage applied to the gate. This new kind of tuneable junction can be used for applications and allows several fundamental questions related to the transport mechanism to be studied. First results of experiments carried out in this respect are presented.pacs [74.40+k,74.50.+r]

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Ballistic reflection at a side gate in a superconductor–semiconductor–superconductor structure

Bastian¹,

Takayanagi²

2001

Physica C: Superconductivity

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Vanadium gate-controlled Josephson half-wave nanorectifier

Puglia

Simoni

Ligato

et al. 2020

Applied Physics Letters

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Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links, and superconductor-normal metal–superconductor junctions. Here, we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a half-wave rectifier at 3 K. Our devices exploit the gate-driven modulation of the critical current of the Josephson junction and the resulting steep variation of its normal-state resistance, to convert an AC signal applied to the gate electrode into a DC one across the junction. All-metallic superconducting gated rectifiers could provide the enabling technology to realize tunable photon detectors and diodes useful for superconducting electronics circuitry.

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Side-gate modulation of critical current in mesoscopic Josephson junction

Cited by 2 publications

References 27 publications

Ballistic reflection at a side gate in a superconductor–semiconductor–superconductor structure

Ballistic reflection at a side gate in a superconductor–semiconductor–superconductor structure

Vanadium gate-controlled Josephson half-wave nanorectifier

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