Sidewall patterning—a new wafer-scale method for accurate patterning of vertical silicon structures

Westerik, Pieter; Vijselaar, Wouter; Berenschot, J.W.; Tas, Niels Roelof; Huskens, Jurriaan; Gardeniers, Han

doi:10.1088/1361-6439/aa9c20

Cited by 10 publications

(15 citation statements)

References 52 publications

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“…These variations were made using a special fabrication method ( Fig. 1c) 24 , because it turned out that the procedure in Fig. 1b, which uses a spin-coated polymer, had to be optimized separately for each geometry.…”

Section: Nature Energymentioning

confidence: 99%

Spatial decoupling of light absorption and catalytic activity of Ni–Mo-loaded high-aspect-ratio silicon microwire photocathodes

et al. 2018

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Substrates with arrays of silicon microwires (4 µ m diameter, 40 µ m length and 6 µ m pitch) with radial junctions (p-type base and 900 nm A solar-driven photoelectrochemical cell provides a promising approach to enable the large-scale conversion and storage of solar energy, but requires the use of Earth-abundant materials. Earth-abundant catalysts for the hydrogen evolution reaction, for example nickel-molybdenum (Ni-Mo), are generally opaque and require high mass loading to obtain high catalytic activity, which in turn leads to parasitic light absorption for the underlying photoabsorber (for example silicon), thus limiting production of hydrogen. Here, we show the fabrication of a highly efficient photocathode by spatially and functionally decoupling light absorption and catalytic activity. Varying the fraction of catalyst coverage over the microwires, and the pitch between the microwires, makes it possible to deconvolute the contributions of catalytic activity and light absorption to the overall device performance. This approach provided a silicon microwire photocathode that exhibited a near-ideal short-circuit photocurrent density of 35.5 mA cm −2 , a photovoltage of 495 mV and a fill factor of 62% under AM 1.5G illumination, resulting in an ideal regenerative cell efficiency of 10.8%.

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Section: Nature Energymentioning

confidence: 99%

Spatial decoupling of light absorption and catalytic activity of Ni–Mo-loaded high-aspect-ratio silicon microwire photocathodes

et al. 2018

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“…For the exposed Au, Ar + ions can effectively etch the Au layer, which in turn sputter redeposits over the BARC-nanopillar sidewall. 71 Sidewall redeposition is governed by the incident – (i) ion energy, (ii) ion flux, and (iii) incident angle of ions during IBE. These parameters are connected to the sputtered material properties and crystallinity, directly impacting the etch-rate.…”

Section: Resultsmentioning

confidence: 99%

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars

et al. 2021

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“…The trench sidewall profile can provide electrical isolation between the metal line over the concave trench. Westerik et al 16 applied the ion beam to etch the upper part of the pillar controlling the inclined angle. The subsequent retraction propagation control of a conformal layer defines the vertical position of the next reaction without using photolithography.…”

Section: Introductionmentioning

confidence: 99%

Patterning vertical sidewall for optical assembly

Yamamoto

Kubo

Kumagai

et al. 2021

J. Optical Microsystems

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We report two approaches of the fabrication techniques for three-dimensional patterning across vertical sidewalls based on the photolithography. One approach applies the techniques of spray coating the photoresist and the angled exposure. The supposed application is the microenergy source summing the voltage of silicon (Si) photo cells. Since Si photo cell islands on the buried oxide are isolated from each other, the output voltage is summed well without interacting with the common substrate. Wiring using the vertical sidewalls minimizes the shadow region caused by the metal electrode. Another approach introduces a new sheet, which consists of polyvinyl alcohol (PVA) and polyethylene terephthalate layers. The photoresist film is spin-coated and pasted on the substrate making the bridge over the trench. The pattern of the cantilever overhanging the trench is transferred. Then, PVA is dissolved in water and the resist is developed. When the rinse water dries, the cantilever bends and adheres on the vertical sidewall. The minimum pattern width designed is 10 μm and is obtained on the vertical sidewall. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Sidewall patterning—a new wafer-scale method for accurate patterning of vertical silicon structures

Cited by 10 publications

References 52 publications

Spatial decoupling of light absorption and catalytic activity of Ni–Mo-loaded high-aspect-ratio silicon microwire photocathodes

Spatial decoupling of light absorption and catalytic activity of Ni–Mo-loaded high-aspect-ratio silicon microwire photocathodes

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars

Patterning vertical sidewall for optical assembly

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