SiGe Amplifier and Buffer Circuits for High Temperature Applications

Thomas, Dylan; Lourenco, Nelson E.; Cressler, John D.; Finn, Steven

doi:10.4071/hitec-dthomas-tha25

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…[1]). Analysis of the information on high-temperature SiGe and SOI electronics [2][3][4][5][6][7][8][9][10] shows that the high-temperature products developed by the world's leading microelectronics companies belong to the class of first-level complexity IP-modules of the first level of complexity. The creation of high-temperature processors and complex computing devices should be attributed to the next stage of development of high-temperature electronics, which will require additional fundamental research into the properties of wide-gap semiconductors and circuit design based on them.…”

Section: Introductionmentioning

confidence: 99%

Basic functional units of high-temperature analog-to-digital sensor interfaces

Bugakova,

Chumakov,

Sergeenko

et al. 2024

Preprint

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Classification of modern architectures of devices for input of analog sensor signals, as well as IP-modules of the first level of complexity, which can be made on the basis of high-temperature technologies (SiGe, SOI, GaN, SiC, GaAs), is given. It turns out that at present there are more than 250 construction variants of primary converters of analog sensor signals. They include 105 operational amplifier’s modifications, 7 differential difference amplifier’s modifications, 22 buffer amplifier’s modifications, and also more than 100 construction variants of special active elements for signal selection tasks under the general name of “current conveyors”. Priorities in realization of basic functional nodes of high-temperature interfaces based on wide-gap semiconductors (GaN, SiC, GaAs) and high-temperature platforms (SiGe, SOI) are determined.

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