2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) 2016
DOI: 10.1109/bctm.2016.7738971
|View full text |Cite
|
Sign up to set email alerts
|

SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 10 publications
(3 citation statements)
references
References 16 publications
0
3
0
Order By: Relevance
“…Next generation network infrastructure relies on optical broadband systems, delivering high data rates at low power consumption and small form factors [1]. In the competition between different materials and technology approaches, silicon photonics (SiP) is one of the high potential candidates.…”
Section: Introductionmentioning
confidence: 99%
“…Next generation network infrastructure relies on optical broadband systems, delivering high data rates at low power consumption and small form factors [1]. In the competition between different materials and technology approaches, silicon photonics (SiP) is one of the high potential candidates.…”
Section: Introductionmentioning
confidence: 99%
“…However, relatively poor noise performance or narrow bandwidth was achieved. Superior performance of SiGe BiCMOS over CMOS makes it possible to design high-speed circuits with high performance, while restrict power consumption to an acceptable level [20]. A couple of chipsets realized in SiGe BiCMOS were published [3,4,5,6,21,22,23,24,25,26].…”
Section: Introductionmentioning
confidence: 99%
“…Optical multi-format [20], multi-carrier [21]- [22] and multi-flow [23] transmitters have been already demonstrated on various photonic platforms such as silicon [24]- [25] and InP [26]- [27] based on monolithic integration. Moreover, copackaging of optical transmitters with high speed electrical integrated circuits (ICs), such as digital-to-analog converters (DACs) or drivers relying on complementary metal-oxide semiconductor (CMOS) [28]- [30] or InP [31]- [32] technology, has been demonstrated in order to enhance performance, compactness and flexibility, facilitating various types of mQAM modulation in either single-polarization (SP) or dual polarization (DP) operation.…”
Section: Introductionmentioning
confidence: 99%