2011 9th IEEE International Conference on ASIC 2011
DOI: 10.1109/asicon.2011.6157396
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SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via

Abstract: This paper presents Silicon Germanium (SiGe) HBT Power Amplifier design challenges and performances using 0.35 !lm SiGe BiCMOS technology with a novel low inductance through-silicon-via (TSV). The large signal load pull on SiGe HBT power cells were performed, and a two-stage power amplifier was designed and measured with tunable input, inter-stage and output matching networks. For a 480 um 2 SiGe HBT power cell, the peak power-added efficiency (PAE) reaches 63% with 20 dBm PldB and 71 % with 21 dBm PldB at 3.5… Show more

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Cited by 4 publications
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