SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Thrivikraman, Tushar; Yuan, Jiahui; Bardin, Joseph C.; Mani, H. S.; Phillips, S.D.; Kuo, Wei-Min Lance; Cressler, John D.; Weinreb, S.

doi:10.1109/lmwc.2008.925104

Cited by 23 publications

(5 citation statements)

References 7 publications

(9 reference statements)

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“…Recent work has reported the record performance of SiGe HBTs at cryogenic temperatures (e.g., f T > half terahertz [7], [8], and peak f max of 0.8 THz [9]). In addition, several recent studies on the cryogenic performance of SiGe HBT-based integrated circuits have been published [e.g., an X-band LNA [10], a K -band power amplifier (PA) [11], and a bandgap voltage reference [12]]. These circuit demonstrations and studies further support the potential of SiGe HBTs for HP and highfrequency cryogenic applications.…”

mentioning

confidence: 83%

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

Cardoso

Omprakash

Chakraborty

et al. 2015

IEEE Trans. Electron Devices

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Large-signal ( P 1 dB ) and small-signal (OIP3) radio frequency (RF) linearities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) fabricated in a new fourth-generation 90-nm SiGe BiCMOS technology operating at cryogenic temperatures are investigated. The SiGe BiCMOS process technology has an f T / f max of 300/350 GHz. SiGe HBTs with two different layout configurations, collector-baseemitter (CBE) and CBE-base-collector (CBEBC), were characterized over temperature. Both dc and ac figures-of-merit are presented to aid in understanding the linearity, and to provide an overall performance comparison between the two layout configurations. The extracted peak f T / f max for CBE and CBEBC at 78 K are 387/350 and 420/410 GHz, respectively. The P 1 dB and OIP3 linearity metrics for both configurations are comparable. Source-and load-pull measurements were performed at each temperature at 8 and 18 GHz, with the devices biased at a J C of 18 mA/μm 2 . Two-tone measurements over bias were also performed at 300 and 78 K with 50-terminations for the source and load impedances. The 50 results follow a similar response to the source-and load-pull measurements at 300 and 78 K, and demonstrate that the small-signal linearity of the SiGe HBTs is not adversely impacted by operation at cryogenic temperatures. The CBEBC configuration demonstrated the most consistent RF linearity performance at cryogenic temperature out of the two layout options.

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confidence: 83%

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

Cardoso

Omprakash

Chakraborty

et al. 2015

IEEE Trans. Electron Devices

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“…Therefore, the cascode amplifier is implemented with a resistive load to save silicon area and to achieve a wide operating band. As for the NF, the transistor should be optimised in terms of input transistor multiplicity, emitter length (for a fixed 0.18 μm emitter width in this work) and current [15][16][17]. The g m of Q 1 is optimised as β/R s so that a low NF is maintained.…”

Section: Low Noise Amplifiermentioning

confidence: 99%

Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS

Yun

et al. 2020

IET Microwaves, Antennas & Propagation

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In this study, the authors present a P‐band phased array front‐end for radar applications, implemented using a 0.18 μm SiGe BiCMOS process, thereby enhancing robustness over process‐voltage‐temperature (PVT) variations. It comprises a low noise amplifier, 6‐bit attenuator, 6‐bit phase shifter, power amplifier, T‐R switches as well as control circuits. As the key here is to achieve high resolutions in both gain and phase controls, the 6‐bit attenuator and 6‐bit phase shifter are optimised by cascading unit cells with different topologies, hence ensuring a good balance between accuracy, silicon area and robustness. Temperature compensation techniques are also used in the low noise amplifier and power amplifier so that the circuit works robustly against PVT variations. Fabricated using TowerJazz 0.18 μm SiGe BiCMOS technology, the prototype front‐end occupies a chip area of 5×2.5thinmathspacenormalmm2, including bonding pads and test buffers. It performs with a receiver (RX) gain of 12 dB, a 3 dB noise figure, and a transmitter (TX) gain of 29 dB, while consuming 60 mW (RX mode) and 600 mW (TX mode) from a 3.3 V supply voltage. The chip is also measured in extreme conditions (e.g. temperatures exceeding 100°C) to ensure robust operation and is suitable for low‐cost phased array systems.

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“…Silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology is a promising solution for cryogenic temperature applications [1][2][3][4][5][6] due to the excellent current gain, radio frequency (RF) response and noise performance over an extremely wide range of temperature [7]. It is well known that silicon bipolar transistors are not suitable for cryogenic applications because of the heavy doping effects and carrier freeze-out at cryogenic temperature [8].…”

Section: Introductionmentioning

confidence: 99%

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

Liang

Wang

et al. 2019

Science Bulletin

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SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Cited by 23 publications

References 7 publications

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

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