2008
DOI: 10.1109/ted.2007.910575
|View full text |Cite
|
Sign up to set email alerts
|

SiGe HBTs With Normal High-Speed Emitter-Up and Reverse Low-Power Collector-Up Operation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2009
2009
2013
2013

Publication Types

Select...
3
2

Relationship

1
4

Authors

Journals

citations
Cited by 15 publications
(1 citation statement)
references
References 17 publications
0
1
0
Order By: Relevance
“…Moreover, it was suggested that an inverted transistor design with a smaller collector on top and a larger emitter at bottom should have speed advantages over the conventional emitter-up (E-up) structure [4]. Practically, in the collector-up (C-up) structure, the base-collector capacitance and the collector resistance are very small, which can lead to good RF performance [5]. Hence, C-up HBTs are expected to comply with the specifications for compact and highly thermal-stable HPA designs.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, it was suggested that an inverted transistor design with a smaller collector on top and a larger emitter at bottom should have speed advantages over the conventional emitter-up (E-up) structure [4]. Practically, in the collector-up (C-up) structure, the base-collector capacitance and the collector resistance are very small, which can lead to good RF performance [5]. Hence, C-up HBTs are expected to comply with the specifications for compact and highly thermal-stable HPA designs.…”
Section: Introductionmentioning
confidence: 99%