SiGe nanowire arrays based thermoelectric microgenerator

Noyan, Inci Dönmez; Gadea, Gerard; Salleras, M.; Pacios, Mercè; Calaza, C.; Stranz, A.; Dolcet, Marc; Morata, Álex; Tarancón, Albert; Fonseca, L.

doi:10.1016/j.nanoen.2018.12.050

Cited by 73 publications

(47 citation statements)

References 40 publications

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“…Si 1-x Ge x was used because both bulk and nanostructured Si 1-x Ge x show significantly enhanced Z compared to pure Si due to suppression of the phonon contribution to κ through random alloy and grain boundary scattering 25 . A large amount of TE device work using Si 1-x Ge x exists, particularly targeted at high temperature applications [25][26][27][28][29] . These works generally use alloy compositions with 0.2 ≤ x ≤ 0.5 because κ is near its minimum value through that range 25,30,31 .…”

Section: Resultsmentioning

confidence: 99%

Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities

Dhawan

Madusanka

et al. 2020

Nat Commun

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Microelectronic thermoelectric generators are one potential solution to energizing energy autonomous electronics, such as internet-of-things sensors, that must carry their own power source. However, thermoelectric generators with the mm 2 footprint area necessary for onchip integration made from high thermoelectric figure-of-merit materials have been unable to produce the voltage and power levels required to run Si electronics using common temperature differences. We present microelectronic thermoelectric generators using Si 0.97 Ge 0.03 , made by standard Si processing, with high voltage and power generation densities that are comparable to or better than generators using high figure-of-merit materials. These Si-based thermoelectric generators have <1 mm 2 areas and can energize off-the-shelf sensor integrated circuits using temperature differences ≤25 K near room temperature. These generators can be directly integrated with Si circuits and scaled up in area to generate voltages and powers competitive with existing thermoelectric technologies, but in what should be a far more cost-effective manner.

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Section: Resultsmentioning

confidence: 99%

Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities

Dhawan

Madusanka

et al. 2020

Nat Commun

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“…1. These settings were optimized for achieving a high ZT and enabling scalable integration in Si-based thermoelectric generators [16,17,33]. NWs grew epitaxially following the <111> directions of the Si of the trenches, allowing the integration of large number of NWs in parallel, with a density of 1-5 NWs/µm 2 ( Fig.…”

Section: Si Nw Growth and Microstructural Characterizationmentioning

confidence: 99%

“…The bottom-up approach employed by Fonseca and co. [13][14][15] tackles contact, embedding and scalability issues, allowing growth and integration of dense arrays of suspended NWs in arbitrarily deep micro-trenches of thermoelectric devices in a single CVD step. Moreover, these devices are able to naturally set up a temperature difference across the NWs when placed on top of hot surfaces exposed to air, generating useful power from waste heat [16,17], while results often reported in literature for micro-TEG devices usually force a temperature difference with a heater, making difficult to ascertain an enhanced thermal performance [10,11,15,18].…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we report the complete thermoelectric characterization (ZT) of p-type Si NWs epitaxially grown by a CVD bottom-up approach on silicon, which enables their direct integration and usage in functional micro-TEG devices [14,16,17,25]. Electrical (σ) and thermal () conductivities were measured in the very same single nanowire by using the DC selfheating method [26,27].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

et al. 2020

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Low-dimensional silicon-based materials have shown a great potential for thermoelectric applications due to their enhanced figure of merit ZT and high technology compatibility. However, their implementation in real devices remains highly challenging due to the associated large contact resistances (thermal and electrical). Herein we demonstrate ultralow contact resistance silicon nanowires epitaxially grown on scalable devices with enhanced ZT. Temperature dependent figure of merit was fully determined for monolithically integrated individual silicon nanowires achieving a maximum value of ZT = 0.2 at 620 K. Sidewise, this work accounts for the first time nearly zero thermal and electrical contact resistances in monolithically integrated bottom-up nanowires.

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“…The other is the utilization of Si compounds such as SiGe alloy which is effective for suppressing the thermal conductivity because the scattering rate in phonon transport is promoted by lattice disturbance and strain originating from random arrangement of Si and Ge atoms [10][11][12][13][14]. Of course, the approach of combining the nanostructure with the SiGe alloy has been already reported [15][16][17][18][19][20][21][22]. For example, the thermal conductivity of Si 1−x Ge x (x=0.4) nanowire with a diameter of 50 nm is theoretically expected to be 1/100 comparing with that of bulk Si [23].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

et al. 2019

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For realizing high power generator efficiency based on thermoelectricity, Si, Ge and SiGe nanostructures have attracted attention. In this paper, we have investigated a new approach to fabricate an ultrathin polycrystalline SiGe-on-insulator (pc-SGOI) substrate by a simple process based on Si and Ge deposition followed by thermal diffusion suitable for thermoelectric devices. A 45-nmthick SGOI layer with a Ge fraction of nearly 0.45 was fabricated, and the Ge fraction was homogeneous in plane over the layer. Its thermal conductivity was 0.87 W mK −1 , lower than that of a single-crystalline SGOI layer. This is caused by the enhancement of scattering of phonons at grain boundaries in the pc-SGOI layer.

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SiGe nanowire arrays based thermoelectric microgenerator

Cited by 73 publications

References 40 publications

Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities

Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities

Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

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