SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation

An analytical subthreshold current model for ferroelectric SiGe-on-insulator field effect transistor (FSGOIFET)

“…To enhance carrier mobility, specifically hole mobility of Si 1-z Ge z , high mole fraction of Ge is desired which reduces the bandgap of Si 1-z Ge z and contributes to very large leakage currents, thereby, becoming pernicious to device performance in subnanometer regime [8,9]. However, various studies have shown that a small mole fraction of Ge (<30%) is sufficient to enhance electron mobility to an appreciable extent, thereby, making Si 1-z Ge z alloy suitable for n-channel devices [10,11].…”