Sign Change of Spin-Orbit Torque in 
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 Structures

Zhu, Dapeng; Zhang, Tianrui; Xiao, Fu; Hao, Runrun; Hamzić, Amir; Yang, Huaiwen; Zhang, Xueying; Zhang, Hui; Du, Ao; Xiong, Danrong; Shi, Kewen; Yan, Shishen; Zhang, Shufeng; Fert, A.; Zhao, Wei

doi:10.1103/physrevlett.128.217702

Cited by 22 publications

(5 citation statements)

References 61 publications

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“…Nevertheless, the use of metallic spin sink layers is generally discouraged due to the potential increase in energy consumption resulting from current shunting. Recently, antiferromagnetic insulators have gained attention for their capabilities in high-efficiency, electron-free spin current transmission. − Within this context, the insulating NiO film, with a high bulk Néel temperature of over 500 K, emerges as a notable candidate in spintronics. ,− Magnon-mediated magnetization switching was achieved with remarkable efficiency in the all-oxide heterostructure of SrRuO 3 /NiO/SrIrO 3 . Specifically, by inserting an insulating NiO layer within an in-plane magnetized Pt/NiO/CoFeB structure, the SOT efficiency of Pt can be significantly enhanced, potentially reaching the upper limit of the spin Hall angle.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Zhang,

Jiang,

et al. 2024

ACS Appl. Electron. Mater.

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In this study, significant modulations of perpendicular magnetic anisotropy, spin–orbit torque (SOT) efficiency (ξSH), and magnetic damping have been achieved in Pt/Co/Ta films after inserting an insulating NiO underlayer. As the NiO thickness (t NiO) varies from 0 to 2 nm, ξSH exhibits a nonmonotonic variation trend, initially increasing and then decreasing after reaching a maximum value at t NiO = 1 nm. The maximum SOT efficiency is as high as 0.60, nearly twice as large as that in the sample without NiO. Based on the NiO thickness dependencies of effective perpendicular anisotropy field and magnetic damping factor, we can conclude that the complex variation in ξSH is attributable to the combined effects of modified interfacial orbital hybridization and spin absorption by the NiO layer. Significantly, the latter is identified as the primary enhancement mechanism at t NiO < 1 nm, as it prevents spins with adverse polarization from reflecting back to the magnetic layer. Our findings demonstrate an alternative approach toward high SOT efficiency by engineering heterostructures with a magnetic insulator underlayer, which may play a powerful role in developing advanced energy-efficient spintronic devices.

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Section: Introductionmentioning

confidence: 99%

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Zhang,

Jiang,

et al. 2024

ACS Appl. Electron. Mater.

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“…Note that the AFM acts as a passive layer in the former configuration. Additionally, using an AFM insulator in an inverted HM|AFM|FM heterostructures can produce a significant torque on the FM layer [ 26 ] and enhance the spin‐orbit torque efficiency [ 27 ] for FM switching when compared to traditional HM|FM metallic‐based devices. By employing an insulating AFM, prevents the passage of electrical current through its own or any neighboring layers.…”

Section: Introductionmentioning

confidence: 99%

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Ajejas,

Torres,

Basaran

et al. 2023

Adv Elect Materials

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Manipulation of antiferromagnetic (AFM) materials as active elements provides a crucial combination of electrical, thermal, and magnetic properties for spintronics. This study shows how the spin current generated in heavy metal is induced by spin‐orbit torque into an adjacent AFM insulator. The bulk unpinned spins of the AFM layer drive a spin current that is transmitted to the top ferromagnet. This mechanism allows the electrical control of the exchange bias, coercive field, and blocking temperature of the system. Further support is provided by a model calculation that quantitatively describes the effect of the spin current injection into the AFM.

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“…Antiferromagnets (AFMs) are promising for replacing ferromagnets as active elements in future spintronics devices owing to their absence of magnetic stray fields, immunity to external magnetic fields, and intrinsic dynamics in the terahertz range. [1][2][3][4][5][6][7][8][9][10][11] In particular, non-collinear AFMs such as Mn 3 X (X = Sn, Ge, Ir, or Pt) with a broken time-reversal symmetry have recently attracted extensive research attentions due to their nontrivial electronic band structures. [12][13][14][15][16] For instance, the non-vanishing Berry curvature of topological Bloch bands induces a large anomalous Hall effect (AHE) despite the zero or negligibly small net magnetization in the non-collinear AFMs, which provides a good platform for exploring the intrinsic AHE physics and a convenient way to access the magnetic states in AFMs.…”

Section: Introductionmentioning

confidence: 99%

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir₂₀Mn₈₀

et al. 2023

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Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect (AHE), magnetic spin Hall effect, and chiral anomaly. The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn3X family such as Mn3Sn and Mn3Ge. Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics, but also have great importance for driving the nontrivial topological properties towards practical applications. Here, we report remarkable AHE, anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir20Mn80 antiferromagnet, which is one of the most widely used antiferromagnetic materials in industrial spintronics. The ab initio calculations suggest that the Ir4Mn16 (IrMn4) or Mn3Ir nanocrystals hold nontrivial electronic band structures, which may contribute to the observed intriguing magnetotransport properties in the Ir20Mn80. Further, we demonstrate the spin-orbit torque switching of the antiferromagnetic Ir20Mn80 by the spin Hall current of Pt. The presented results highlight a great potential of the magnetron-sputtered Ir20Mn80 film for exploring the topological antiferromagnet-based physics and spintronics applications.

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Sign Change of Spin-Orbit Torque in Pt/NiO/CoFeB Structures

Cited by 22 publications

References 61 publications

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir₂₀Mn₈₀

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Sign Change of Spin-Orbit Torque in Pt/NiO/CoFeB Structures

Cited by 22 publications

References 61 publications

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir20Mn80

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Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir₂₀Mn₈₀