Significance of Ammonothermal Synthesis for Nitride Materials

Niewa, Rainer

doi:10.1007/978-3-030-56305-9_1

Cited by 2 publications

(2 citation statements)

References 61 publications

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“…Hydrothermal (Quartz) Ammonothermal (GaN) Solvent (critical parameters) [132] Water (374. However, even the supercritical ammonia atmosphere is often not reactive enough to cause sufficient dissolution of the nitride source material for effective crystal growth.…”

Section: Fluid Property/process Characteristicmentioning

confidence: 99%

“…Notably, solubility in ammonothermal solutions demonstrates a significant dependency on temperature and pressure, with alterations in these parameters exerting substantial effects on element solubility and chemical equilibria within the solution medium [132]. From the viewpoint of bulk crystal growth, the temperature dependency of solubility is particularly relevant, however, quantitative data are available only for GaN and even for GaN, those data are incomplete and partially contradictory [128].…”

Section: Reactivity and Solubility Of Elements Under Ammonothermal Co...mentioning

confidence: 99%

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Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.

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Section: Fluid Property/process Characteristicmentioning

confidence: 99%

Section: Reactivity and Solubility Of Elements Under Ammonothermal Co...mentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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Ammonothermal Synthesis and Crystal Structure of the Ternary Amide Na₂Ba(NH₂)₄

Engelsberger,

Witthaut,

Schnick

2024

Zeitschrift anorg allge chemie

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The ternary amide Na2Ba(NH2)4 was synthesized at ammonothermal conditions (870 K, 135 MPa) in custom‐built high‐pressure autoclaves. The compound was structurally characterized using X‐ray diffraction and crystallizes in space group Pccn (no. 56) with lattice parameters a = 10.6492(2), b = 7.8064(2) and c = 8.1046(2) Å. To the best of our knowledge, the structure type has not yet been observed in any ternary amide before and can be described as a defective variant of the NaCl structure type. The presence of amide ions in the compound is verified by Fourier‐transform infrared (FTIR) spectroscopy and the experimental spectrum is compared to the theoretical spectrum obtained through density functional theory (DFT) calculations. Na2Ba(NH2)4 complements the range of reported ternary alkali metal alkaline‐earth metal amides with the smallest Shannon radius ratio of rA/AE = 0.76. The influence of this ratio on the formation of the new structure type is discussed as well. The characterization of intermediate species such as this ternary amide extends the understanding of the ammonothermal synthesis and can be useful for synthetic control in the formation of nitrides at ammonothermal conditions.

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Significance of Ammonothermal Synthesis for Nitride Materials

Cited by 2 publications

References 61 publications

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Synthesis and Crystal Structure of the Ternary Amide Na₂Ba(NH₂)₄

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Significance of Ammonothermal Synthesis for Nitride Materials

Cited by 2 publications

References 61 publications

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Synthesis and Crystal Structure of the Ternary Amide Na2Ba(NH2)4

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Product

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Ammonothermal Synthesis and Crystal Structure of the Ternary Amide Na₂Ba(NH₂)₄