2018
DOI: 10.1149/2.0701807jes
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Significant Effects of Electrode Metal Work Function on Resistive Memory Devices with Gelatin Biodielectric Layer

Abstract: Biomaterials gelatin is used as the dielectric layer in this work to develop metal/gelatin/Tungsten (W) RRAM devices, with silver (Ag), copper (Cu), W, and gold (Au) as the top electrode (TE) to study the effects of electrode metals on device characteristics. All types of the RRAM devices exhibit bipolar resistive switching characteristics with diverse performances. The work function difference between the TE and bottom electrode (BE) metals is found to play a profound role in determining the characteristics o… Show more

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Cited by 8 publications
(8 citation statements)
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“…The electron conductivity in sensors largely depends on the presence of ions and charged particles, which are the charge carriers in the internal biosystem within gelatin. , What is of particular interest is that gelatin possesses an optimal electrical conductivity compared to most commonly available biomaterials, facilitating electron–hole transfer with decreased coordination . Furthermore, the 1D structure of gelatin allows the direction of carrier transport within the material to be restricted, as shown in Figure a.…”
Section: Resultsmentioning
confidence: 99%
“…The electron conductivity in sensors largely depends on the presence of ions and charged particles, which are the charge carriers in the internal biosystem within gelatin. , What is of particular interest is that gelatin possesses an optimal electrical conductivity compared to most commonly available biomaterials, facilitating electron–hole transfer with decreased coordination . Furthermore, the 1D structure of gelatin allows the direction of carrier transport within the material to be restricted, as shown in Figure a.…”
Section: Resultsmentioning
confidence: 99%
“…As reported in our previous work [26], the resistive switching behavior of metal TE/gelatin/W devices was investigated thoroughly using a conductive atomic force microscope (C-AFM) and transmission electron microscope (TEM) measurements. The resistive switching behavior was attributed to the formation and fracture of metallic conductive filaments composed of elements from the used metal electrodes, which has been directly observed.…”
Section: Resultsmentioning
confidence: 99%
“…Compared with metals like Au, Ag, and Cu, local oxidation is more likely to occur on Al electrodes at the interface, which might be a decisive influence factor explaining its unique performance [120][121][122][123][124][131][132][133]. As reported by Liu et al [8], the work function difference between TE and BE metals has significant effects on device characteristics and performance. RRAM devices made from TE and BE metals with larger work function difference have a higher and more stable on/off resistance ratio with larger set and reset voltages.…”
Section: Rram Based On Graphene and Its Derivativesmentioning
confidence: 90%