Significant enhancement in photoluminescent properties via flux assisted Eu3+ doped BaNb2O6 phosphor for white LEDs

Vishwakarma, Anand Kumar; Jayasimhadri, M.

doi:10.1016/j.jallcom.2016.05.052

Cited by 36 publications

(2 citation statements)

References 52 publications

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“…Flux materials are widely used in SSR to improve the luminescent properties and morphologies of the phosphors. [42][43][44] However, despite numerous researches on fluxes, there is still no general rule for the selection of fluxes for the preparation of specific phosphors. The screening of fluxes primarily depends on trial and error.…”

Section: Study On the Influence Of Fluxmentioning

confidence: 99%

Novel deep‐red‐emitting double‐perovskite type Ca₂ScNbO₆:Mn⁴⁺ phosphor: Structure, spectral study, and improvement by NaF flux

et al. 2022

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A novel deep‐red‐emitting phosphor Ca2ScNbO6:Mn4+ is prepared via a high‐temperature solid‐state reaction and its luminescent properties are systematically investigated. The results show that Mn4+‐activated Ca2ScNbO6 phosphors have broad absorption in ultraviolet region, and show bright deep‐red emission at 692 nm. The optimal doping concentration, crystal‐field strength, internal quantum efficiency, and mechanism of concentration and thermal quenching effects are discussed in detail. Moreover, NaF flux is screened out to improve both luminescent intensity and morphology of the phosphor. Finally, a red light‐emitting diode (LED) lamp is fabricated with as‐prepared Ca2ScNbO6:Mn4+ phosphors and a 365 nm LED chip. The electroluminescence spectra show a good overlapping with phytochrome PR and PFR absorbance. The results provided the as‐synthesized Ca2ScNbO6:Mn4+ phosphors a great potential in plant growth lighting.

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Section: Study On the Influence Of Fluxmentioning

confidence: 99%

Novel deep‐red‐emitting double‐perovskite type Ca₂ScNbO₆:Mn⁴⁺ phosphor: Structure, spectral study, and improvement by NaF flux

et al. 2022

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“…It is commonly used for fabricating light-emitting diodes (LEDs) due to their wide bandgap, chemical stability, and high temperature stability. These LEDs emit from the ultraviolet to the visible range [1][2][3]. Sapphire (Al 2 O 3 ) has become a key material for fabricating GaN-based LEDs because it serves as an excellent epitaxial substrate due to its small lattice-constant mismatch with GaN.…”

Section: Introductionmentioning

confidence: 99%

A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer

Huang

Lin

2017

Applied Sciences

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This study reports on the use of a substrate-reclamation technology for a gallium nitride (GaN)-based lighting-emitting diode (LED) wafer. There are many ways to reclaim sapphire substrates of scrap LED wafers. Compared with a common substrate-reclamation method based on chemical mechanical polishing, this research technology exhibits simple process procedures, without impairing the surface morphology and thickness of the sapphire substrate, as well as the capability of an almost unlimited reclamation cycle. The optical performances of LEDs on non-reclaimed and reclaimed substrates were consistent for 28.37 and 27.69 mcd, respectively.

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Down-shifting photoluminescence studies of thermally stable Dy3+ ions doped borosilicate glasses for optoelectronic device applications

Bajaj

Prasad

Yeswanth³

et al. 2022

J Mater Sci: Mater Electron

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Significant enhancement in photoluminescent properties via flux assisted Eu3+ doped BaNb2O6 phosphor for white LEDs

Cited by 36 publications

References 52 publications

Novel deep‐red‐emitting double‐perovskite type Ca₂ScNbO₆:Mn⁴⁺ phosphor: Structure, spectral study, and improvement by NaF flux

Novel deep‐red‐emitting double‐perovskite type Ca₂ScNbO₆:Mn⁴⁺ phosphor: Structure, spectral study, and improvement by NaF flux

A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer

Down-shifting photoluminescence studies of thermally stable Dy3+ ions doped borosilicate glasses for optoelectronic device applications

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Significant enhancement in photoluminescent properties via flux assisted Eu3+ doped BaNb2O6 phosphor for white LEDs

Cited by 36 publications

References 52 publications

Novel deep‐red‐emitting double‐perovskite type Ca2ScNbO6:Mn4+ phosphor: Structure, spectral study, and improvement by NaF flux

Novel deep‐red‐emitting double‐perovskite type Ca2ScNbO6:Mn4+ phosphor: Structure, spectral study, and improvement by NaF flux

A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer

Down-shifting photoluminescence studies of thermally stable Dy3+ ions doped borosilicate glasses for optoelectronic device applications

Contact Info

Product

Resources

About

Novel deep‐red‐emitting double‐perovskite type Ca₂ScNbO₆:Mn⁴⁺ phosphor: Structure, spectral study, and improvement by NaF flux

Novel deep‐red‐emitting double‐perovskite type Ca₂ScNbO₆:Mn⁴⁺ phosphor: Structure, spectral study, and improvement by NaF flux