Significantly enhanced photoelectrochemical cathodic protection performance of hydrogen treated Cr-doped SrTiO3 by Cr6+ reduction and oxygen vacancy modification

Visible light responsive metalloporphyrin-sensitized TiO2 nanotube arrays for artificial photosynthesis of methane

“…It shows that all the as-synthesized samples exhibited positive slopes of the linear plots and can be identified as n-type semiconductors. The flat band potentials ( E fb ) of these samples could be obtained from the horizontal intercept, 48 and are about −0.44, −0.48, −0.53, and −0.54 V ( vs. Ag/AgCl, pH = 6.5) for the pure TiO 2 NTs, TCPP/TiO 2 NTs, CuTCPP/TiO 2 NTs and CoTCPP/TiO 2 NTs, respectively. Which are equal to −0.27 V, −0.31 V, −0.36 V and −0.37 V versus the normal hydrogen electrode (NHE, pH = 7) according to the Nernst equation.…”

Electrochemical Cr(VI) Reduction over Terpyridine-Derivatized Ti Sheets

“…As a consequence, the Ti 2p BE was shifted to a higher BE position after the EC tests, as mentioned above. In the Cr 2p XP spectrum of the Ti-AuNP-STpy electrode dipped in the Cr 6+ solution, two peaks are clearly observed at BEs of 578 and 587.5 eV, attributed to Cr 2p 3/2 and Cr 2p 1/2 peaks, respectively, of Cr(III) [33]. These Cr 2p peaks of Cr(III) reflect the fact that the terpyridine ligand plays a significant role in the reduction of Cr(VI) to Cr(III).…”

New g-C3N4/GO/MoS2 composites as efficient photocatalyst for photocathodic protection of 304 stainless steel

“…T was the temperature. k was the Boltzmann constant ( Jing et al 2019). The flat band potential (E FB ) was determined from the horizontal intercept.…”

“…Normally, semiconductor is coated on the protected metal surface or acts as anode through wires connected to the protected metal (Ren et al 2016). Electrons of the semiconductor in the valence band (VB) excited by light, migrate into the conduction band (CB), and the corresponding holes generate in the VB ( Jing et al 2019). At the interface between semiconductor thin film and the solution, the holes (h þ ) migrate to the surface of semiconductor particles and oxidize the electron donor (such as H 2 O, OH À ), while electrons (e À ) migrate to the protected metal.…”