Significantly enhanced piezoelectric performance in Bi4Ti3O12-based high-temperature piezoceramics via oxygen vacancy defects tailoring

Xie, Xinchun; Zhou, Zhiyong; Liang, Ruihong; Dong, Xianlin

doi:10.1016/j.jmat.2020.08.003

Cited by 52 publications

(24 citation statements)

References 53 publications

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“…The E a values obtained in the LT region are found to be within the range of 0.48–0.80 eV, indicating that the electrical conduction process is dominated by the thermally activated oxygen vacancies. In the HT region, E a values are on the order of 1.25–1.74 eV, which accord well with the energy of half the band‐gap energy, indicating that the intrinsic conduction dominates the conduction process 41–43 . Moreover, the values of E a in the HT region increase significantly in comparison with the unmodified CBN, so it can reasonably be inferred that the Tb ions modification makes the bandgap larger, leading to enhanced dc electrical resistivity (i.e., increased insulativity).…”

Section: Resultssupporting

confidence: 59%

“…In the HT region, E a values are on the order of 1.25-1.74 eV, which accord well with the energy of half the band-gap energy, indicating that the intrinsic conduction dominates the conduction process. [41][42][43] Moreover, the values of E a in the HT region increase significantly in comparison with the unmodified CBN, so it can reasonably be inferred that the Tb ions modification makes the bandgap larger, leading to enhanced dc electrical resistivity (i.e., increased insulativity). In the LT region, the electrical conductivity is dominated by oxygen vacancies that were formed by the volatilization of bismuth during the sintering process for maintaining the charge neutrality, as Equation ( 3) indicated.…”

Section: Resultsmentioning

confidence: 95%

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Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi₂Nb₂O₉ ceramics for high‐temperature piezoelectric applications

et al. 2022

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Bismuth layer–structured ferroelectric calcium bismuth niobate (CaBi2Nb2O9, CBN) is considered to be one of the most potential high‐temperature piezoelectric materials due to its high Curie temperature Tc of ∼940°C, but the drawbacks of low electrical resistivity at elevated temperature and low piezoelectric performance limit its applications as key electronic components at high temperature (HT). Herein, we report significantly enhanced dc electrical resistivity and piezoelectric properties of CBN ceramics through rare‐earth element Tb ions compositional adjustment. The nominal compositions of Ca1−xTbxBi2Nb2O9 (abbreviated as CBN‐100xTb) have been fabricated by conventional solid‐state reaction method. The composition of CBN‐3Tb exhibits a significantly enhanced dc electrical resistivity of 1.97 × 106 Ω cm at 600°C, which is larger by two orders of magnitude compared with unmodified CBN. The donor substitutions of Tb3+ ions for Ca2+ ions reduce the oxygen vacancy concentrations and increase the band‐gap energy, which is responsible for the enhancement of dc electric resistivity. The temperature‐dependent dc conduction properties reveal that the conduction is dominated by the thermally activated oxygen vacancies in the low‐temperature region (200–350°C) and by the intrinsic conduction in the HT region (350–650°C). The CBN‐3Tb also exhibits enhanced piezoelectric properties with a high piezoelectric coefficient d33 of ∼13.2 pC/N and a high Tc of ∼966°C. Moreover, the CBN‐3Tb exhibits good thermal stabilities of piezoelectric properties, remaining 97% of its room temperature value after annealing at 900°C. These properties demonstrate the great potentials of Tb‐modified CBN for high‐temperature piezoelectric applications.

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Section: Resultssupporting

confidence: 59%

Section: Resultsmentioning

confidence: 95%

Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi₂Nb₂O₉ ceramics for high‐temperature piezoelectric applications

et al. 2022

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“…Figure 1a shows the relationship of d 33 and T c of BIT-based ceramics by the conventional solid-state method about the work and the reported data. [32,[34][35][36][37][38][39][40][41][42][43][44][45][46][47] A series of high-performance BIT-based ceramics are obtained in the work. Especially, the optimal piezoelectric coefficient d 33 of 40.2 pC N −1 , the largest value among the BIT-based ceramics up to now, as well as a fairly high Curie temperature of 657 °C for CeWNb modified BIT-based ceramics have been achieved.…”

Section: Resultsmentioning

confidence: 99%

Superior Piezoelectricity in Bismuth Titanate‐Based Lead‐Free High‐Temperature Piezoceramics via Domain Engineering

Xie

Zhou

Liang

et al. 2022

Adv Elect Materials

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requirements of functionality and stabilization at high-temperature conditions. [5][6][7] Ferroelectric ceramics with the perovskite structure ABO 3 , such as BaTiO 3 , Pb(Zr,Ti)O 3 , and Pb(Mg 1/3 Nb 2/3 ) O 3 -PbTiO 3 , usually possess high piezoelectric constants d 33 (100-1500 pC N −1 ), but their Curie temperature T c is low (50-400 °C). [8,9] Thus, the usage range of the system is restricted to below 300 °C. Bismuth layer-structured ferroelectrics (BLSFs) have the general chemical formula (Bi 2 O 2 ) 2+ (A m-1 B m O 3m+1 ) 2− , and their structure is that (A m-1 B m O 3m+1 ) 2− perovskite layers are sandwiched between (Bi 2 O 2 ) 2+ fluorite-like layers along the c-axis. [10] Consequently, BLSFs piezoelectrics possess high Curie temperature T c (500-1000 °C), high mechanical quality factors, and low aging rates, which make them promising candidates for the hightemperature electronic industry. [11][12][13] Bismuth titanate, Bi 4 Ti 3 O 12 (BIT), is always regarded as an excellent candidate for high-temperature electromechanical systems owing to its high Curie temperature (T c is of 675 °C) as well as outbound spontaneous polarization (P s is of 50 µC cm −2 along the a-axis). [14][15][16] However, the piezoelectricity of BIT ceramics is poor (only 6-8 pC N −1 ) due to its strong anisotropic polarization, a large coercive field, and high leakage current. Extensive research has been made to acquire high-performance BITbased ceramics, including chemical modification and grain orientation techniques. [17][18][19][20][21][22][23] For example, a high d 33 of 21 pC N −1 and T c of 655 °C, as well as a lower dielectric loss of 0.3%, High-temperature piezoelectric materials are widely needed in electromechanical sensors, actuators, and transducers that are exposed to high-temperature conditions. Bismuth layer-structured bismuth titanate (Bi 4 Ti 3 O 12 , BIT) ferroelectrics have a high Curie temperature of 675 °C but suffer from poor electrical properties, especially the piezoelectricity. Here, a giant piezoelectric coefficient d 33 of 40.2 pC N −1 is obtained in the Bi 3.97 Ce 0.03 Ti 2.98 (WNb) 0.01 O 12 ceramics with a high Curie temperature of 657 °C, the highest value reported to date in BIT-based piezoceramics. Electrical property and microstructural analysis reveal that the high piezoelectricity benefits from the preferential orientation of ferroelectric domains, the irreversibility of ferroelectric domain reorientation, and the high density of ferroelectric domain walls. Besides, excellent thermal stability of piezoelectric constant (d 33 = 36.7 pC N −1 at 500 °C, <10% variations in the range of room temperature to 500 °C), high electrical resistivity (ρ > 10 7 Ω cm at 500 °C), and low loss (tanδ < 1.5% at 500 °C) are also obtained in the Bi 3.97 Ce 0.03 Ti 2.98 (WNb) 0.01 O 12 ceramics. This work not only penetrates the origins of outstanding piezoelectricity of BITbased ceramics but also offers prospects for brand-new tactics to exploit high-performance high-temperature piezoceramics.

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“…and surface absorbed H 2 O. However, as Ar atoms are used to etch and clean the sample surface before XPS testing, surface‐OH and surface‐absorbed H 2 O were excluded 22,23 . Hence, the single peak O V can be attributed to the presence of oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

Defect engineering for reduced large AC signal dielectric loss of PZT‐based hard piezoelectric ceramics

et al. 2021

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A low dielectric loss value under large AC electric fields is highly desired for piezoelectric ceramics in high‐power applications. However, only a few reports have focused on studying or revealing the dielectric loss behavior and mechanism of piezoelectric ceramics under an AC electric field. In this work, x (Ca, Fe) co‐doped Pb0.96Sr0.04Zr0.53Ti0.47O3 (x = 0.0, 0.25, 0.5, 1.0, 1.5 mol.%) hard piezoelectric ceramics (PSZT‐xCF) were selected for investigation. The lowest dielectric loss (@ E = 500 V mm−1) was 0.8% at x = 1.5 mol.% after aging for 30 days, which was a decrease by an order of magnitude compared with the counterpart pure PSZT. The origin of ultra‐low dielectric loss was thoroughly analyzed. Combined with Rayleigh's law, we investigated the reason behind the changes in dielectric permittivity under AC electric fields with aging time. The significant reduction in the contribution of extrinsic effect of domain wall motion dominated the reduction in dielectric loss because of the introduction of defect dipoles. This work provides a fundamental understanding of low dielectric loss piezoelectric ceramics under AC electric fields for high‐power applications.

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Significantly enhanced piezoelectric performance in Bi4Ti3O12-based high-temperature piezoceramics via oxygen vacancy defects tailoring

Cited by 52 publications

References 53 publications

Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi₂Nb₂O₉ ceramics for high‐temperature piezoelectric applications

Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi₂Nb₂O₉ ceramics for high‐temperature piezoelectric applications

Superior Piezoelectricity in Bismuth Titanate‐Based Lead‐Free High‐Temperature Piezoceramics via Domain Engineering

Defect engineering for reduced large AC signal dielectric loss of PZT‐based hard piezoelectric ceramics

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Significantly enhanced piezoelectric performance in Bi4Ti3O12-based high-temperature piezoceramics via oxygen vacancy defects tailoring

Cited by 52 publications

References 53 publications

Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi2Nb2O9 ceramics for high‐temperature piezoelectric applications

Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi2Nb2O9 ceramics for high‐temperature piezoelectric applications

Superior Piezoelectricity in Bismuth Titanate‐Based Lead‐Free High‐Temperature Piezoceramics via Domain Engineering

Defect engineering for reduced large AC signal dielectric loss of PZT‐based hard piezoelectric ceramics

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Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi₂Nb₂O₉ ceramics for high‐temperature piezoelectric applications

Significantly enhanced dc electrical resistivity and piezoelectric properties of Tb‐modified CaBi₂Nb₂O₉ ceramics for high‐temperature piezoelectric applications