2022
DOI: 10.1016/j.apsusc.2021.151739
|View full text |Cite
|
Sign up to set email alerts
|

Significantly improved photo carrier injection by the MoS2/ZnO/HNP hybrid UV photodetector architecture

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
15
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 28 publications
(15 citation statements)
references
References 46 publications
0
15
0
Order By: Relevance
“…This is attributed to the high photogain in devices as EQE should be less than unity. The performance of similar photodetectors reported in the literature is compared in Table . ,,,,, A graphical representation of the charge-transfer process in plasmonic and nonplasmonic photodetectors is presented in Figure e. The strategically placed plasmonic Au nanoislands facilitate direct coupling with the two semiconductors through LSPR leading to the improvement of the broadband optoelectronic performance, even when none is having band edge absorption in the visible region.…”
Section: Resultsmentioning
confidence: 99%
“…This is attributed to the high photogain in devices as EQE should be less than unity. The performance of similar photodetectors reported in the literature is compared in Table . ,,,,, A graphical representation of the charge-transfer process in plasmonic and nonplasmonic photodetectors is presented in Figure e. The strategically placed plasmonic Au nanoislands facilitate direct coupling with the two semiconductors through LSPR leading to the improvement of the broadband optoelectronic performance, even when none is having band edge absorption in the visible region.…”
Section: Resultsmentioning
confidence: 99%
“…[2][3][4][5][6][7] Advanced UV-PD devices require high photocurrent, fast response, low power consumption and stable operation. [9][10][11][12][13] Recently, the integration of various photoactive materials such as metallic nanoparticles (NPs), semiconductor quantum dots and 2D materials into a hybrid PD design has been gaining increased attention, which can offer innovative opportunities to overcome the performance limitation of conventional UV PDs. [13][14][15][16][17] The localized surface plasmon resonance (LSPR), namely, the resonant oscillation of free electrons on metallic NPs, induces interesting phenomena such as strong absorption, scattering, localized e-fields and hot electron injection, which can offer a promising route to enhance the performance of UV PDs.…”
Section: Introductionmentioning
confidence: 99%
“…[9][10][11][12][13] Recently, the integration of various photoactive materials such as metallic nanoparticles (NPs), semiconductor quantum dots and 2D materials into a hybrid PD design has been gaining increased attention, which can offer innovative opportunities to overcome the performance limitation of conventional UV PDs. [13][14][15][16][17] The localized surface plasmon resonance (LSPR), namely, the resonant oscillation of free electrons on metallic NPs, induces interesting phenomena such as strong absorption, scattering, localized e-fields and hot electron injection, which can offer a promising route to enhance the performance of UV PDs. 16 For example, the integration of chemically synthesized Au NPs on a semiconductor substrate exhibited the amplification of photoresponsivity due to the injection of hot electrons into the conduction band of the active layer.…”
Section: Introductionmentioning
confidence: 99%
“…Notably, plasmonic nanostructures which can yield near-unity absorption at the resonant wavelengths have been successfully introduced into photodetectors made of inorganic semiconductors, e.g., silicon [ 23 , 24 , 25 ], titanium dioxide [ 26 , 27 ], and zinc oxide [ 28 , 29 , 30 ], for extending their operating spectral ranges. In those photoelectric devices, light absorption occurs in metals by the excitation of plasmonic resonances, followed by the generation of free carriers in neighboring semiconductors, based on the processes of hot-carrier transfer, charge-transfer transition, or resonant energy transfer [ 31 , 32 , 33 ].…”
Section: Introductionmentioning
confidence: 99%