Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi2Ti2O7 high‐k gate dielectrics

Cho, Kwang Hwan; Kang, Min Gyu; Jang, Ho Won; Shin, Hyun Yong; Kang, Chong Yun; Yoon, Seok Jin

doi:10.1002/pssr.201206080

Cited by 7 publications

(5 citation statements)

References 17 publications

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“…Moreover, on dielectric surfaces with a high density of trap states, more mobile holes are trapped and do not make contribution to the drain current of the unmodified SiO 2 device in the same time scale, which lead to a decreased drain current. Besides, the leakage current density of the device is relatively high due to induced charge trap by the roughness valleys [42]. The presence of charge traps in the insulator will generally result in a greatly reduced current at lower injection levels, since those traps initially empty will capture, and thereby immobilize, most of the injected carriers.…”

Section: Resultsmentioning

confidence: 99%

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

Yang

et al. 2017

Nanotechnology

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The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO dielectric. The results showed that the organic-modified SiO dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO dielectric although the thickness of OTS layer is only ∼2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.

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Section: Resultsmentioning

confidence: 99%

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

Yang

et al. 2017

Nanotechnology

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“…Oxides and solid solutions with the pyrochlore structure A 2 B 2 O 7 (or A 2 B 2 O 6 O’, where A and B are rare earth or transition elements) attracted a lot of attention as materials for many applications such as oxygen [ 1 , 2 , 3 , 4 ] and hydrogen [ 5 , 6 ] separation membranes, solid oxide fuel cell/electrolyzer electrolytes [ 1 , 7 , 8 , 9 ] and electrodes [ 8 , 10 , 11 ], catalysts for various transformation processes [ 12 , 13 ], pigments [ 14 , 15 ], etc. [ 16 , 17 , 18 ]. The prospects of using pyrochlores in various electrochemical devices are provided by their high ionic or mixed ionic-electronic conductivity, depending on their composition and synthesis conditions [ 1 , 8 , 9 , 10 , 11 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Oxygen Mobility of Bismuth Cerates and Titanates with Pyrochlore Structure

et al. 2023

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Synthesis and study of materials based on bismuth cerates and titanates were carried out. Complex oxides Bi1.6Y0.4Ti2O7 were synthesized by the citrate route; Bi2Ce2O7 and Bi1.6Y0.4Ce2O7—by the Pechini method. The structural characteristics of materials after conventional sintering at 500–1300 °C were studied. It is demonstrated that the formation of a pure pyrochlore phase, Bi1.6Y0.4Ti2O7, occurs after high-temperature calcination. Complex oxides Bi2Ce2O7 and Bi1.6Y0.4Ce2O7 have a pyrochlore structure formed at low temperatures. Yttrium doping of bismuth cerate lowers the formation temperature of the pyrochlore phase. As a result of calcination at high temperatures, the pyrochlore phase transforms into the CeO2-like fluorite phase enriched by bismuth oxide. The influence of radiation-thermal sintering (RTS) conditions using e-beams was studied as well. In this case, dense ceramics are formed even at sufficiently low temperatures and short processing times. The transport characteristics of the obtained materials were studied. It has been shown that bismuth cerates have high oxygen conductivity. Conclusions are drawn about the oxygen diffusion mechanism for these systems. The materials studied are promising for use as oxygen-conducting layers in composite membranes.

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“…In other works, new thin films based on La‐, Sm‐, Ce‐, and Mn‐doped BTO were produced to enhance the dielectric properties compared to undoped BTO 22,25,29–31 . The dielectric properties of the pyrochlore thin films were established to depend not only on the type and location of dopant but also on the annealing temperature and, consequently, on the degree of crystallinity.…”

Section: Introductionmentioning

confidence: 99%

“…20,21,28 In other works, new thin films based on La-, Sm-, Ce-, and Mn-doped BTO were produced to enhance the dielectric properties compared to undoped BTO. 22,25,[29][30][31] The dielectric properties of the pyrochlore thin films were established to depend not only on the type and location of dopant but also on the annealing temperature and, consequently, on the degree of crystallinity. For example, the (La 0.05 Bi 0.95 ) 2 Ti 2 O 7 pyrochlore thin film, calcined at 550 • C, showed the lowest leakage current and highest dielectric constant (3.31⋅10 −8 A/cm 2 and 157, respectively, at an applied field of 100 kV/cm) compared to the films prepared at 650 and 750 • C. 29 For the (Bi 0.88 Ce 0.12 ) 2 Ti 2 O 7 thin films annealed at 700 • C, the authors found the maximum dielectric constant of 214 and the minimum losses of 0.06 at 100 kHz.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the required properties of the new pyrochlore compounds could be controlled by varying the type and amount of the dopant. For instance, the 3d, 4f block elements are chosen to substitute for bismuth in BTO pyrochlore due to the proximity of their ionic radii and the ionic radius of Bi 3+ at the close charge state, [20][21][22][23][24][25] Therefore, much research in recent years has focused on the dielectric properties of the new doped BTO prepared in the form of polycrystalline ceramics or thin films.…”

Section: Introductionmentioning

confidence: 99%

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Low‐temperature dielectric behavior of Sc‐ and In‐doped bismuth titanate pyrochlores

2021

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The detailed structural description and analysis of dielectric behavior of Bi1.6MxTi2O7‐δ (M – Sc, In; x = 0.2, 0.4, 0.6) compositions are demonstrated. Doping results in cation disorder either in A‐site (x = 0.2, 0.4) or A‐,B‐sites (x = 0.6) of pyrochlore. The displacements of the A‐site atoms and O′ from the ideal sites are shown. For both dopants, the maximum dielectric constant ε′ was 98, and the dielectric losses remain reasonably close to the values below 0.0058 at x = 0.4, 25 °C, 1 MHz. A drop of ε′ is observed at the other dopants concentrations. With the dopant content rising, the temperature coefficient of capacitance (TCC) increases and is positive (579 ÷ 782 ppm/°C) below room temperature (RT) and then becomes negative (−49 ÷ −220 ppm/°C) above RT. The revealed low‐temperature relaxation process could be associated with jumps of the A‐ions within the A2O′ substructure.

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Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi₂Ti₂O₇ high‐k gate dielectrics

Abstract: Phone: +82 2 958 6722, Fax: +82 2 958 6720

Cited by 7 publications

References 17 publications

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

Synthesis and Oxygen Mobility of Bismuth Cerates and Titanates with Pyrochlore Structure

Low‐temperature dielectric behavior of Sc‐ and In‐doped bismuth titanate pyrochlores

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