2015
DOI: 10.1016/j.ceramint.2015.03.239
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SILAR coated Bi2S3 nanoparticles on vertically aligned ZnO nanorods: Synthesis and characterizations

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Cited by 54 publications
(19 citation statements)
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“…The E g value of Bi 2 S 3 /ZnO NRAs/ITO decreased from 3.22 eV to 1.90 eV as the cationic concentration was risen from 1 mM to 10 mM. The calculated values agreed with earlier studies [13]. Furthermore, when the cationic precursor concentration increased, it led to the increase in the thickness of thin film.…”
Section: Resultssupporting
confidence: 88%
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“…The E g value of Bi 2 S 3 /ZnO NRAs/ITO decreased from 3.22 eV to 1.90 eV as the cationic concentration was risen from 1 mM to 10 mM. The calculated values agreed with earlier studies [13]. Furthermore, when the cationic precursor concentration increased, it led to the increase in the thickness of thin film.…”
Section: Resultssupporting
confidence: 88%
“…The peak at 575.5 cm −1 is ascribed to O 2 vacancies and the low intensity of this peak indicates its low defect on the ZnO thin film [13]. Meanwhile, the rest of the peaks located at 152 and 236, 480 and 710 cm −1 correspond to Bi 2 S 3 which is in agreement with the Raman peaks as demonstrated by [13,26,28].…”
Section: Resultssupporting
confidence: 79%
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“…QDs represents a more efficient solution with respect of dye sensitizers because of better stability and chemical compatibility with ZnO, tunable properties and dimensions by ease control of synthesis parameter and higher optical absorption. A great variety of semiconducting QDs like CdS, CdSe, CdTe, PbS, PbSe, CuInS 2 , Bi 2 S 3 , In 2 S 3 , and carbon QDs has been implemented in ZnO based photovoltaic cell to work in visible range and cover a larger adsorption spectrum. Functionalization of ZnO nanostructures with QDs can be classified in two groups depending on the particles growth approach.…”
Section: Surface‐engineering Of Zno Nanostructures With Nanoparticlesmentioning
confidence: 99%