2005
DOI: 10.1103/physrevb.71.024208
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Silica glass structure generation forab initiocalculations using small samples of amorphous silica

Abstract: Multiple small samples of amorphous silica have been generated and optimized using classical dynamics and the van Beest-Kramer-van Santen ͑BKS͒ empirical potential function. The samples were subsequently optimized and annealed using density functional theory ͑DFT͒ with both the local density and the generalized gradient approximations. A thorough analysis of the local and medium-range structure of the optimized samples obtained from the different methods was carried out. The structural characteristics obtained… Show more

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Cited by 142 publications
(141 citation statements)
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“…Table II contains the bond lengths and bond angles of the optimized oxide polymorphs. These results can be used to identify the representation of each polymorph within the amorphous oxides 52 . The elastic constants and dielectric permittivity tensor of each crystal are tabulated in Table III and Table IV, respectively.…”
Section: First-principles Resultsmentioning
confidence: 99%
“…Table II contains the bond lengths and bond angles of the optimized oxide polymorphs. These results can be used to identify the representation of each polymorph within the amorphous oxides 52 . The elastic constants and dielectric permittivity tensor of each crystal are tabulated in Table III and Table IV, respectively.…”
Section: First-principles Resultsmentioning
confidence: 99%
“…We have adopted the structure generation approach of Van Ginhoven, Jonsson, and Corrales, 35 which was shown to reproduce experimental pair distribution functions for pure silica. The approach requires a classical interatomic potential to perform long-time molecular dynamics (MD) simulations at the beginning, followed by further DFT optimizations.…”
Section: Oxygen Transport In Silica-rich Liquidmentioning
confidence: 99%
“…Three-and five-fold Si have been reported in previous simulations [13,17]-fast cooling rates in MD simulation tend to artificially trap large numbers of these defects-however, their formation energy has not been reported. Their appearance as isolated defect pairs in our simulations with slower cooling rates and low formation energies indicate that III-Si and V-Si are likely a native defects in a-SiO 2 .…”
mentioning
confidence: 99%