Silicidation of Silicon Nanowires by Platinum

Liu, Bangzhi; Wang, Yanfeng; Dilts, Sarah M.; Mayer, Theresa S.; Mohney, Suzanne E.

doi:10.1021/nl062393r

Cited by 61 publications

(66 citation statements)

References 25 publications

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“…Kinking was also observed in the formation of platinum silicides on VLS grown SiNWs [20]. They observed that the silicide morphology depended on the SiNW diameter as well as the thickness of deposited metal.…”

Section: Fe-sinw Solid-state Reactionmentioning

confidence: 93%

“…Previous work has also been on performed on reactions in the nanowire geometry. Liu et al [20] found that reaction between evaporated Pt on SiNWs began at 250°C, and at temperatures above 400°C, the reaction product was PtSi. They also observed that if the Pt was in excess (Pt films thicker than the SiNW diameter), then the phase that would form was Pt 2 Si due to the excess Pt available to continue reacting after the conversion to PtSi.…”

Section: Introductionmentioning

confidence: 99%

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Silicide formation in contacts to Si nanowires

2012

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Silicides, intermetallic compounds formed by the reaction of a metal and Si, have long been used as contacts for metal oxide semiconductor (CMOS) transistors and have more become interesting for other Si nanowire (SiNW) devices. In the following, experimental results for the Ti, V, Pt, Pd, Fe, and Ni-Si systems are reported and placed in the context of prior work on silicide formation from metal films on Si wafers. For the early transition metals Ti and V, the silicide is formed only underneath the contact pad and is Si-rich (MSi 2 ). For the middle transition metal Fe and late transition metals Pt and Pd, a metal-rich silicide was the first phase observed to form, but poor morphologies were common, making it a challenge to incorporate these contacts into nanowire devices. Nickel contacts were the only ones with well-behaved axial silicide growth away from the contact pad, and silicide formation was strongly dependent on the original SiNW orientation. These findings are discussed in terms of kinetic features of the metal-SiNW systems.

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Section: Fe-sinw Solid-state Reactionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Silicide formation in contacts to Si nanowires

2012

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“…The fabrication of nanosized silicon wires derived from SiH2Cl2 and SiCl4 also has some advantages, however, and the main one is that we can have a much broader choice of possible VLS catalyst materials due the higher reaction temperature. For example, Pt, [86][87][88] Ni, 89 and Zn 90 are also very good choices if the VLS-CVD process is employed under even higher temperatures. Mallet et al 91 synthesized amorphous nanosized silicon wires by using SiCl4 dissolved in an ionic liquid (1-butyl-1-methylpyrrolidinium bis(triuoromethanesulfonyl) imide (P1,4)) through the CVD process under a higher temperature.…”

Section: Sihxclymentioning

confidence: 99%

Si-containing precursors for Si-based anode materials of Li-ion batteries: A review

Zhang

Liu

Zhao

et al. 2016

Energy Storage Materials

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Lithium-ion batteries with high energy density are in demand for consumer electronics, electric vehicles, and grid-scale stationary energy storage. Si is one of the most promising anode materials due to its extremely high specific capacity. However, the full application of Si-based anode materials is limited by poor cycle life and rate capability resulted from low ionic/electronic conductivity and large volume change over cycling. In recent years, great progress has been made in improving the performance of Si anodes by employing nanotechnology. The preparation methods are essentially important, in which the precursors used are crucial to design and control the microstructure for the Si-based materials. In this review, we provide comprehensive summary and comment on different Si-containing precursors for preparation of nanosized Si-based anode materials and focus on the corresponding electrochemical performances in lithium-ion batteries. Bulk sized silicon, silicon wafer and silicon microparticles are generally used as starting materials to synthesize porous or nanosized silicon, and the routes for the synthesis are rather mature and commercially available. Silica is also commonly used to form silicon by conversion through a facile magnesiothermic reduction. Silica derivation from natural resources, especially from rice husks, is much more sustainable and lower cost than alternative methods, which attracts considerable research attention. In addition, gaseous Si-based sources like SiH4, Si2H6 and SiHxCly, liquid silicon sources like trisilane and phenylsilane and elemental silicon have successfully used to prepare nanosized or carbon-coated silicon. Further considerations on massive production possibility have also been presented. Si-Containing Precursors for Si-Based Anode Materials of Li-Ion Batteries AbstractLithium-ion batteries with high energy density and large power output are in demand for consumer electronics, electric vehicles, and grid-scale stationary energy storage. Silicon is one of the most promising anode materials because it has 10 times higher specific capacity than that of the commercial graphitic carbon anode. Unfortunately, the practical utilization of silicon-based anode materials is still hindered by its low electronic conductivity and high capacity fading rate due to the large volume changes upon insertion and extraction of Li ions during cycling. Introducing porous structure, along with decreasing the dimension of Si-based materials to nanosize, is an effective way to address these problems. During the past decade, tremendous attention has been paid to improve Si anodes so as to give them better electrochemical performance. In this review, we focus the Si-containing precursors for preparation of Si-based anode materials.3

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“…We then discuss spatially controlled doping for the production of CS logic [21]. Much of this effort has centered around trying to identify robust and general methods for establishing Ohmic contacts to both p-and n-type Si NWs [22]. While the performance of CS inverters largely provides the metrics for this work, we also discuss our extension of this work to produce more complex CS logic structures, including staged logic that requires full signal restoration of the output voltages [23].…”

Section: Nano Researchmentioning

confidence: 99%

Development of ultra-high density silicon nanowire arrays for electronics applications

et al. 2008

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This article reviews our recent progress on ultra-high density nanowires (NWs) array-based electronics. The superlattice nanowire pattern transfer (SNAP) method is utilized to produce aligned, ultra-high density Si NW arrays. We fi rst cover processing and materials issues related to achieving bulk-like conductivity characteristics from 10 20 nm wide Si NWs. We then discuss Si NW-based fi eld-effect transistors (FETs). These NWs & NW FETs provide terrifi c building blocks for various electronic circuits with applications to memory, energy conversion, fundamental physics, logic, and others. We focus our discussion on complementary symmetry NW logic circuitry, since that provides the most demanding metrics for guiding nanofabrication. Issues such as controlling the density and spatial distribution of both p-and n-type dopants within NW arrays are discussed, as are general methods for achieving Ohmic contacts to both p-and n-type NWs. These various materials and nanofabrication advances are brought together to demonstrate energy effi cient, complementary symmetry NW logic circuits.

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Silicidation of Silicon Nanowires by Platinum

Cited by 61 publications

References 25 publications

Silicide formation in contacts to Si nanowires

Silicide formation in contacts to Si nanowires

Si-containing precursors for Si-based anode materials of Li-ion batteries: A review

Development of ultra-high density silicon nanowire arrays for electronics applications

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