Silicide formation in the Co-Si system by rapid thermal annealing

Morphological and magnetic study of plasma assisted solid-state dewetting of ultra-thin cobalt films on conductive titanium silicon nitride supports

“…which reduce significantly the efficiency of dewetting process [56]. Indeed, while bulk diffusion is described to lower the size of nanoparticles which is desirable on one part, this loss of mass and its interaction with the underlying substrate causes deactivation of the nanoparticles [56] and the forming of unwanted alloys [57]. On the other hand, larger particles grow in size at the expense of smaller particles and decreases the number density with time, a phenomenon known as Ostwald ripening, which consists of coarsening in which the particle size increases and particle density reduces after extended annealing [58,59].…”

A conductance model for kinetics studies when more than two phases are involved

“…(a) In the Co-Si system for the formation of the final CoSi 2 phase during the process: [17]. Here R 0 is the sheet resistance of the initial phase, R a is related to the intermediate CoSi and R f is the resistivity of the CoSi 2 end phase.…”

“…6 of Ref. [17] were converted to sheet resistance to construct resistance vs. time curves shown in Fig. 1.…”

“…All the three near-noble silicides considered below, fall into this category of controversy, see for example, Refs. [9,[12][13][14][15][16][17][18][19][20][21][22][23]. (b) The required parameters, i.e.…”