2014
DOI: 10.1016/j.apsusc.2014.01.020
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Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

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Cited by 7 publications
(1 citation statement)
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“…Their relatively low electric resistivity and good compatibility with silicon substrates make them eminently suitable candidate materials for contacts or interconnects in electronic applications [7][8][9][10][11][12]. Among metal silicides the vanadium silicide system with different phases [13] has been found to be of increasing interest because one of the silicide phases namely V 3 Si (A-15 structure) exhibits high temperature superconductivity [14] while another phase, VSi 2 , shows an interesting combination of refractory properties and good electrical conductivity [15].…”
Section: Introductionmentioning
confidence: 99%
“…Their relatively low electric resistivity and good compatibility with silicon substrates make them eminently suitable candidate materials for contacts or interconnects in electronic applications [7][8][9][10][11][12]. Among metal silicides the vanadium silicide system with different phases [13] has been found to be of increasing interest because one of the silicide phases namely V 3 Si (A-15 structure) exhibits high temperature superconductivity [14] while another phase, VSi 2 , shows an interesting combination of refractory properties and good electrical conductivity [15].…”
Section: Introductionmentioning
confidence: 99%