1990
DOI: 10.1021/ja00168a008
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Silicon-29 NMR characterization of .alpha.- and .beta.-silicon nitride

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Cited by 76 publications
(56 citation statements)
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“…For the spin-1 = 2 nuclei 15 N and 29 Si, only the isotropic part of the chemical-shift tensor survives the MAS process. The isotropic chemical shift d iso of À45.5 ppm observed for the 29 Si nuclei in Si 3 B 3 N 7 suggests that the silicon atoms occupy tetrahedral coordination environments of nitrogen atoms (for example, for a-Si 3 N 4 d iso = À46 and À48 ppm), [43,44] confirming the results mentioned above. To obtain an acceptable signal-to-noise ratio in the 15 N MAS NMR spectrum of Si 3 B 3 N 7 , a sample enriched to 100 % with the isotope 15 N was necessary.…”
Section: Short-range Ordersupporting
confidence: 82%
“…For the spin-1 = 2 nuclei 15 N and 29 Si, only the isotropic part of the chemical-shift tensor survives the MAS process. The isotropic chemical shift d iso of À45.5 ppm observed for the 29 Si nuclei in Si 3 B 3 N 7 suggests that the silicon atoms occupy tetrahedral coordination environments of nitrogen atoms (for example, for a-Si 3 N 4 d iso = À46 and À48 ppm), [43,44] confirming the results mentioned above. To obtain an acceptable signal-to-noise ratio in the 15 N MAS NMR spectrum of Si 3 B 3 N 7 , a sample enriched to 100 % with the isotope 15 N was necessary.…”
Section: Short-range Ordersupporting
confidence: 82%
“…The signal at approximately −48 ppm corresponds to the reported chemical shift for Si 3 N 4 (−48.5 ppm). 59 The signal at −16 ppm and the shoulder at −20 ppm appear to be similar to the chemical shifts for β-SiC (−16.3 ppm) 60 and 2H-SiC (−20.0 ppm). 61 In the Raman spectrum of the residue, two bands are observed at 1337 and 1595 cm −1 , which are consistent with the Raman spectrum of amorphous carbon.…”
Section: Characterizations Of the Residue Pyrolyzed At 1700mentioning
confidence: 56%
“…Si 3 N 4 is also a wide-band-gap semiconductor used in the optical and electrical device industries [4]. However, Si 3 N 4 nanotubes and nanowires have recently attracted much attention because of their enhanced hardness associated with their unique optical and other mechanical properties [5][6][7] as compared with coarse-grained Si 3 N 4 ceramic materials. As a result, different physical and chemical routes have been proposed and developed for the synthesis of Si 3 N 4 nanowires.…”
Section: Introductionmentioning
confidence: 99%