“…In their experiments, broad 29 Si peaks, which were similar to our experiments, appeared for the Si-C mixture milled for 48 h and 72 h. The peaks have shoulders at À24.5 ppm, and the authors explained that they were formed by the stacking faults in 3C polymorph. Narisawa et al [19], Bouclé et al [21], Harrison et al [22], and Martin et al [56] have fabricated SiC by pyrolysis of polymers or selective area laser deposition. Similar broad 29 Si peaks, which were also had shoulders, were detected at about À20 ppm, furthermore the XRD patterns of those experiments [21,22,55] were similar to these for the ball milled SiC.…”