1999
DOI: 10.1111/j.1151-2916.1999.tb02227.x
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Silicon‐29 Solid‐State MAS NMR Investigation of Selective Area Laser Deposition Silicon Carbide Material

Abstract: The microstructure of silicon carbide fabricated from the gas‐phase‐based, laser‐driven selective area laser deposition (SALD) process has been characterized by X‐ray diffraction and solid‐state 29Si NMR techniques with magic angle spinning (MAS). X‐ray patterns reveal the characteristic spectrum of pure ß, cubic silicon carbide polytype while NMR shows a ß‐SiC pattern with additional peaks. To determine the source of the extra peaks, a comparative evaluation of commercially available silicon carbide powders, … Show more

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Cited by 11 publications
(5 citation statements)
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“…The plot of the intensity of the NMR signal at −18.5 ppm vs recovery delay τ shows an exponential-like dependence (Figure ) with the best fit obtained using a double exponential function of the form from which T 1 SiC and T 1 SiC-C , the spin−lattice relaxation times of the two different types of silicon sites, can be derived ( M 0 SiC and M 0 SiC-C are the corresponding amplitudes). The four parameter least-squares fit gives relaxation times T 1 SiC = 137 ± 20 s and T 1 SiC-C = 16 ± 3 s. The first value is in good agreement with the relaxation time of ∼130 s reported for β-SiC . Thus, both the relaxation time and the 29 Si chemical shift confirm that one of silicon sites in the as-synthesized compound corresponds closely to cubic silicon carbide.…”
Section: Resultssupporting
confidence: 81%
“…The plot of the intensity of the NMR signal at −18.5 ppm vs recovery delay τ shows an exponential-like dependence (Figure ) with the best fit obtained using a double exponential function of the form from which T 1 SiC and T 1 SiC-C , the spin−lattice relaxation times of the two different types of silicon sites, can be derived ( M 0 SiC and M 0 SiC-C are the corresponding amplitudes). The four parameter least-squares fit gives relaxation times T 1 SiC = 137 ± 20 s and T 1 SiC-C = 16 ± 3 s. The first value is in good agreement with the relaxation time of ∼130 s reported for β-SiC . Thus, both the relaxation time and the 29 Si chemical shift confirm that one of silicon sites in the as-synthesized compound corresponds closely to cubic silicon carbide.…”
Section: Resultssupporting
confidence: 81%
“…To further investigate the polytypes of SiC in the SiBCN powders, 29 Si solid-state NMR studies were introduced. Previous 29 Si solid-state NMR studies have outlined the relationship of the spectra to phase properties of SiC [18][19][20][21][22]. Typically, a single resonance line is observed in the spectrum of b-SiC while up to three closely spaced resonances characterize the a-SiC materials.…”
Section: Microstructure Of the Cs And CD Samplesmentioning
confidence: 97%
“…In their experiments, broad 29 Si peaks, which were similar to our experiments, appeared for the Si-C mixture milled for 48 h and 72 h. The peaks have shoulders at À24.5 ppm, and the authors explained that they were formed by the stacking faults in 3C polymorph. Narisawa et al [19], Bouclé et al [21], Harrison et al [22], and Martin et al [56] have fabricated SiC by pyrolysis of polymers or selective area laser deposition. Similar broad 29 Si peaks, which were also had shoulders, were detected at about À20 ppm, furthermore the XRD patterns of those experiments [21,22,55] were similar to these for the ball milled SiC.…”
Section: The Polytypes Of the Sic In Sibcn Powdersmentioning
confidence: 98%
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“…The broad peak at À18.3 ppm (as shown in Fig. 3(a)) indicates that amorphous SiC structure based on SiC 4 sites was formed in SiB 0.5 C 1.5-N 0.8 Al 0.3 powders [12]. A small peak at À90.3 ppm is attributed to the residual starting Si material due to insufficient milling [12].…”
Section: Resultsmentioning
confidence: 94%