Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Abstract

Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

Wide-field mid-infrared single-photon upconversion imaging

“…However, these conventional imagers usually require the high-cost fabrication process based on epitaxial growth methods, as well as the stringent cryogenic operation 4 . In recent years, tremendous progress has been witnessed in developing sensitive MIR detectors at room temperature 5 , 6 , especially resorting to emerging materials like colloidal quantum dots 7 , black phosphorus 8 , 9 , graphene 10 , and tellurium nanosheet 11 , 12 . To date, the performance of the reported MIR photodetectors is still limited by the high dark current, which results in a noise equivalent power about nW/Hz 1/2 , many orders of magnitude from the single-photon sensitivity 13 .…”

The Light Absorption Enhancement in Graphene Monolayer Resulting from the Diffraction Coupling of Surface Plasmon Polariton Resonance

“…Due to the considerably good optical and electrical properties, graphene is known to hold a great promising potential in photoelectric devices, such as photodetectors, modulators, perfect absorbers, photovoltaics, photocatalysts, etc. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. However, the absorption efficiency of 2.3% is too low for the efficient operation of graphene-based photoelectric devices.…”

Density-functional-theory simulations of the water and ice adhesion on silicene quantum dots

“…Silicene holds many physical properties that are comparable with graphene, such as high carrier mobility 5 – 7 , anomalous integer quantum Hall effect 8 – 12 , giant magnetoresistance 13 – 16 and superconductivity 17 – 19 . However, as a promising material for electronic devices such as gas sensors 20 – 22 , field effect transistors 15 , 23 , 24 , photodetectors 25 – 27 and biodegradable drug carriers 28 , the studies of the surface wetting properties of silicene and its nanostructures are still rare 29 . Furthermore, the conventional waterproofing techniques are challenging to be implemented in the real-world applications 30 – 32 .…”

“…Furthermore, the conventional waterproofing techniques are challenging to be implemented in the real-world applications 30 – 32 . silicene nanodots (SND) or nanoflakes have been shown to have more amenable reaction sites at the nanoscale than graphene in the same form 33 – 35 , which is associated with their higher chemisorption ability 25 , 26 . Nevertheless, this higher ability may imply that silicenes would absorb water molecules to a greater extent than graphene 36 , which might be detrimental for many further electronic applications of silicenes.…”