Silicon antiresonant reflecting optical waveguides

Abstract

A new silicon waveguide called ARROW-C is proposed and analyzed at the 1.3-microm wavelength. The silicon structure uses two buried layers of SiO(2) or beta-SiC with a thickness of 14-23 nm to permit optical tunneling for leakymode propagation. A propagation loss of ~0.5 dB/cm is predicted for the TE(0) or the TM(0) mode in a 5-microm-thick Sicore layer. Novel silicon ARROW-A and ARROW-B guides are also discussed. The former uses a pair of buried GeSi layers; the latter employs buried SiO(2) and GeSi films.

<title>Vertical 3-D integration of silicon waveguides in a Si-SiO<formula><inf><roman>2</roman></inf></formula>-Si-SiO<formula><inf><roman>2</roman></inf></formula>-Si structure</title>

“…The defect density in this 5-layer sample is in the range of iO cm2, which is typical of the non-optimized or standard Simox process. This program was described in a paper by Soref and Ritter [12]. Based on other experiments [17,18], we firmly believe that the defect density in 6-layer 501 can be reduced below 1O cm2, either by multiple low-dose O1mplants [17] or by high-temperature implants [18].…”

“…A number of silicon waveguides have been developed in the past four years, including: dopedlayer waveguides (n/nt p/p, n/p) [4], silicon-on-sapphire [5,6], GeSii on Si [7,8], Si I /Si [9], Si-on-Si02 [10, 1 1], and anti-resonant reflecting optical waveguides (ARROWs) which are 6-layer structures [12]. The modulation-doped guides have propagation losses of 5-15 dB/cm, but the other approaches listed are capable of lower losses.…”

Processing of Diamond for Integrated Optic Devices Using Q-Switched Nd:YAG Laser at Different Wavelengths

“…Obviously, an optical device with such an enormous roughness would have unaffordable insertion losses if light was injected to the integrated optical device by end fire coupling. This is the main reason why after the cutting step, integrated optics devices need to be polished if one uses mechanical means of cutting, which is true for the case of conventional integrated optical devices based on silicon and other materials [13][14][15][16][17][18][19]. But in laser sawing of diamond, a majority of such post-polishing steps can be avoided and we have observed that the diamond crystals are sawn perfectly.…”

Photonic crystal waveguides based on an antiresonant reflecting platform

“…The original ARROW idea was further developed in [10][11][12] where new generations of ARROW structures with a high index core and a low index first cladding were proposed and characterised. These are the so-called ARROW-B (Fig.1, b) and ARROW-C configurations, which are applicable for SOI-based PCWs.…”

“…A standard core thickness of classical ARROW structures is about 4-5 microns or more [10][11][12], and losses rapidly decrease with increasing core thickness. On the contrary, the thickness of the silicon core in an SOI-based PCW is severely limited by the requirement of a reasonable size of the photonic band gap.…”