Silicon-based electrically injected GeSn lasers

Ojo, Solomon; Zhou, Yiyin; Acharya, Sudip; Saunders, Nicholas A.; Amoah, Sylvester; Jheng, Yue‐Tong; Tran, Ha Nguyen; Du, Wei; Chang, Guo‐En; Li, Baohua; Yu, Shui-Qing

doi:10.1117/12.2615476

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…One must note that by employing the pulsed supersonic free jets techniques [42][43][44][45], an inverse heteroepitaxial growth of Si on SiC has been demonstrated to achieve multilayer structures [46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65]. A novel arc plasma C gun source is incorporated in the molecular beam epitaxial (MBE) methods to grow ultrathin MQWs and SLs [66][67][68][69][70].…”

Section: Introductionmentioning

confidence: 99%

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite numerous efforts made to simulate the structural, electronic, and dynamical properties of binary materials, no vibrational and/or thermodynamic studies exist for the ternary alloys. By adopting a realistic rigid-ion-model (RIM), we have reported methodical calculations to comprehend the lattice dynamics and thermodynamic traits of both binary and ternary compounds. With appropriate interatomic force constants (IFCs) of XC at ambient pressure, the study of phonon dispersions offered positive values of acoustic modes in the entire Brillouin zone (BZ)—implying their structural stability. For XxY1−xC, we have used Green’s function (GF) theory in the virtual crystal approximation to calculate composition x, dependent and one phonon density of states . With no additional IFCs, the RIM GF approach has provided complete in the crystallographic directions for both optical and acoustical phonon branches. In quasi-harmonic approximation, the theory predicted thermodynamic characteristics (e.g., Debye temperature ΘD(T) and specific heat Cv(T)) for XxY1−xC alloys. Unlike SiC, the GeC, SnC and GexSn1−xC materials have exhibited weak IFCs with low [high] values of ΘD(T) [Cv(T)]. We feel that the latter materials may not be suitable as fuel-cladding layers in nuclear reactors and high-temperature applications. However, the XC and XxY1−xC can still be used to design multi-quantum well or superlattice-based micro-/nano devices for different strategic and civilian application needs.

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Section: Introductionmentioning

confidence: 99%

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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“…[13][14][15] The development and improvement in the performance of Ge 1Àx Sn x -based lasers was obtained by acting on strain and Sn content since the first proof-of-principle in 2015 [16] and reaching operating temperature of 130 K, [12] 180 K, [17] and 230 K [18] for both continuous-wave and pulsing modes of optically pumped lasers, with the lasing threshold as low as 0.8 kW cm À2 . [13] Recent activities [11] have demonstrated room-temperature lasing for optically pumped lasers in pulsed mode, while the state-of-the-art for electrically pumped lasers has achieved milestones up to 90 K. [19,20] Several efforts have been also devoted to study laser designs based on Fabry Perot cavities, [16] photonic crystals, [18,21] or microbridges. [6] Nonetheless, the fine-tuning of alloys and microstructures toward specific applications requires a thorough understanding of the contribution of individual parameter to the Ge 1Àx Sn x band structure, which essentially depends on the interplay between Sn content and thermomechanical properties of the devices operating under different temperatures.…”

Section: Introductionmentioning

confidence: 99%

The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1−xSn_xMicrodisks

Zaitsev,

Corley-Wiciak,

Corley-Wiciak

et al. 2023

Physica Rapid Research Ltrs

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Germanium‐tin microdisks are promising structures for CMOS‐compatible lasing. Their emission properties depend on Sn concentration, strain, and operating temperature. Critically, the band structure of the alloy varies along the disk due to the different lattice deformation associated with the mechanical constraints in the microstructures. We report an experimental and numerical study of Ge1‐xSnx microdisk with Sn concentration between 8.5 and 14 at.%. Combining finite element method calculations, micro‐Raman spectroscopy and X‐ray diffraction spectroscopy enables a comprehensive understanding of mechanical deformation, where computational predictions are experimentally validated, leading to a robust model and insight into the strain landscape. Through micro‐photo‐luminescence experiments, the temperature dependence of the band gap of Ge1‐xSnx is parametrized using the Varshni formula with respect to strain and Sn content. These results are the input for a spatially‐dependent band structure calculation based on the deformation potential theory. We observe that Sn content and temperature have comparable effects on the bandgap, yielding a decrease of more than 20 meV for an increase of 1 at.% or 100 K, respectively. We also find that the strain gradient impacts the band structure in the whole volume of the microdisk. These findings correlate structural properties to the emission wavelength and spectral width of Ge1‐xSnx microdisk lasers, thus demonstrating the importance of material‐related consideration on the design of optoelectronic microstructures.This article is protected by copyright. All rights reserved.

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Defects in Ge and GeSn and their impact on optoelectronic properties

Giunto,

Fontcuberta i Morral

2024

Applied Physics Reviews

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GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip Si photonics. Multiple challenges to achieve optoelectronic-grade GeSn have been successfully solved in the last decade. We stand today on the brink of a potential revolution in which GeSn could be used in many optoelectronic applications such as light detection and ranging devices and lasers. However, the limited understanding and control of material defects represents today a bottleneck in the performance of GeSn-based devices, hindering their commercialization. Point and linear defects in GeSn have a strong impact on its electronic properties, namely, unintentional doping concentration, carrier lifetime, and mobility, which ultimately determine the performance of optoelectronic devices. In this review, after introducing the state-of-the-art of the fabrication and properties of GeSn, we provide a comprehensive overview of the current understanding of GeSn defects and their influence on the material (opto)electronic properties. Where relevant, we also review the work realized on pure Ge. Throughout the manuscript, we highlight the critical points that are still to solve. By bringing together the different fabrication techniques available and characterizations realized, we offer a wholistic view on the field of GeSn and provide elements on how it could move forward.

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Silicon-based electrically injected GeSn lasers

Cited by 4 publications

References 20 publications

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1−xSn_xMicrodisks

Defects in Ge and GeSn and their impact on optoelectronic properties

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Silicon-based electrically injected GeSn lasers

Cited by 4 publications

References 20 publications

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnxMicrodisks

Defects in Ge and GeSn and their impact on optoelectronic properties

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Product

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The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1−xSn_xMicrodisks