Silicon-based electroluminescent polycrystalline Er-doped Yb3Al5O12 nanofilms fabricated by atomic layer deposition

Atomic Layer Deposition and Electroluminescence of Er-Doped Polycrystalline Lu3Ga5O12 Nanofilms for Silicon-Based Optoelectronics

“…The higher Lu/Ga ratios equate to lower Er/Lu concentrations, which further disperse Er dopants in the nanolaminates and contribute to the suppression of cross-relaxation among Er 3+ ions. Additionally, the values of EL lifetime and efficiencies are close to that of YGG:Er MOSLEDs in our previous work, and the optimal EL decay lifetime for the gallium garnet nanofilms (2.2–2.5 ms) is much longer than that for the aluminum garnets (1.2–1.8 ms), beneficial for laser applications. − …”

“…The compositions and doping levels of these LuGG:Er MOSLEDs are adjusted by tuning the deposition cycle of Lu 2 O 3 interlayers to optimize the EL performance. Each Lu 2 O 3 interlayer was inserted with two Er 2 O 3 cycles, which has been certified to be the optimal recipe in previous reports. − Figure shows the EL spectra under different injection currents, from the amorphous and crystalline LuGG:Er MOSLEDs (Lu/Ga = 0.59, 1.0 nm Ga 2 O 3 interlayers) after annealing at 700 and 800 °C, respectively. The peak of the main emissions from the crystallized LuGG:Er device is located at 1529 nm, accompanied with several discrete peaks at ∼1465, 1569, and 1624 nm.…”

“…The details of the growth parameters and the characterizations were as previously reported. − ,, Briefly, different Ga 2 O 3 /Lu 2 O 3 /Er 2 O 3 nanolaminates were grown on n-type silicon substrates (phosphorous-doped, 2–5 Ω·cm) using a commercial ALD system (4 inch chamber, MNT Micro and Nanotech Co., Ltd.). Triethyl-gallium [Ga­(C 2 H 5 ) 3 , maintained at room temperature (RT)], Lu­(THD) 3 , and Er­(THD) 3 (THD: 2,2,6,6-tetramethyl-3,5-heptanedionate, both heated to 200 °C) were used as the precursors for Ga 2 O 3 , Lu 2 O 3 , and Er 2 O 3 , respectively, with ozone used as the oxidant.…”

“…The decay lifetime under electrical excitation is established in the range of 1.53–2.22 ms. The LuGG:Er devices manifest higher current injection and EL intensity than the aluminum garnet ones, as well as improved doping tolerance, longer operation time, and leading EQE among the gallium garnet devices. − This work contributes to the development of integrated photonics and solid-state lighting, where CMOS-compatible and efficient Si-based light sources are required, and provides new research accomplishment for optoelectronic applications.…”

Polycrystalline Er-doped Y3Ga5O12 nanofilms fabricated by atomic layer deposition on silicon at a low temperature and the exploration on electroluminescence performance

“…Similar phenomena corresponding to the crystallinity of other garnets have been reported previously, which also results from the modification on the crystal field around the doped RE ions by changes in the local lattice structure. [40][41][42][43] The broad EL peaks at 1466 and 1620 nm are assigned to 3 H 11/2 → 4 I 9/2 and 3 I 9/2 → 4 I 13/2 electric-dipole transitions, while the sharp bands at 1530 and 1566 nm are regarded as the 3 I 13/2 → 4 I 15/2 and 3 S 3/2 → 4 I 9/2 magnetic-dipole transitions of Er 3+ ions, respectively. [44][45][46][47] Fig.…”