Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films

Ultraviolet-driven metal oxide semiconductor synapses with improved long-term potentiation

“…[5][6][7] Particularly, ever since the first experimental report of long-term potentiation (LTP) synaptic transmission in an anaesthetized rabbit, 8 the increasing prevalence of biological LTP-related investigations has intensified research interests in artificial counterparts. [9][10][11] The transition from short-term potentiation (STP) to LTP has been claimed to be facilely realized based on two-terminal memristors with active materials including metal nanoparticles, 12 nanocomposite films, 13 two-dimensional (2D) nanosheets, 14 etc. However, the memory retention of LTPs in these studies is usually restricted to several minutes, even though this time scale is already much longer than those for memory retention of STPs.…”

A multimode‐fused sensory memory system based on a robust self‐assembly nanoscaffolded BaTiO3:Eu2O3 memristor

“…Fortunately, the ferroelectric memristor do not require the electroforming process to activate the device, in which as the ferroelectric domains in the ferroelectric film can be turned over by polarization, resulting in a precise and continuous change of the resistance state and then it can improve the accuracy of image recognition. [24][25][26] However, most ferroelectric materials are grown on singlecrystal substrates, 25 and the lack of silicon compatibility of complex oxide materials hinders the practical integration of the device with existing silicon CMOS technologies. Moreover, the pure BaTiO 3 (BTO) ferroelectric materials often suffer from high dielectric loss and low Curie temperatures, which are not conducive to longterm data preservation.…”

A SmNiO3 memristor with artificial synapse function properties and the implementation of Boolean logic circuits

“…As the basic unit of a neural heuristic architecture, it is considered to be one of the most promising electronic devices to build high-density circuits and realize neural morphological computing, instead of memory and processor devices in CMOS circuits. [6][7][8] It has the advantages of a simple structure, high integration, fast operation and low power consumption; moreover, it can realize synaptic bionic functions. [9][10][11] Therefore its efficient computing capability has brought about changes to traditional computing systems.…”