Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping

Abstract

Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly, and can enable the development of on‐chip complementary metal‐oxide‐semiconductor (CMOS)‐compatible photonic systems. However, extending their room‐temperature photoresponse into the mid‐wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room‐temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p‐n photodiode exhibits a spectral photoresponse up to 5 µm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0–1.9 µm. The correlation between the background noise and the sensitivity of the Te‐hyperdoped Si photodiode, where the maximum room‐temperature specific detectivity is found to be 3.2 × 1012 cmHz1/2 W−1 and 9.2 × 108 cmHz1/2 W−1 at 1 µm and 1.55 µm, respectively, is also investigated. This work contributes to pave the way towards establishing a Si‐based broadband infrared photonic system operating at room temperature.

Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon

“…More significantly, the hybrid device can exhibit a room-temperature NEP of 4.36 pW Hz –1/2 at the wavelength of 2.7 μm, which exhibits a longer response wavelength than the regular InGaAs detectors (usually restricted below 1.7 μm) . Other graphene-based photodetectors are also compared, which proves that the graphene/Te–Si devices herein can exhibit a competitive performance in NEP, responsivity, and spectral response, as shown in Figure c and Figure d. − Such low NEP of the graphene/Te–Si devices is superior to the previously reported typical graphene/silicon photodetectors (see Table S3).…”

Macroscopic and microscopic defect management in blue/green photodetectors for underwater wireless optical communication

“…Such a short response time mainly originated from the efficient interfacial charge transfer and improved carrier mobility, evidenced by PL and TRPL results. It is worth noting that the response time of optimized Br-MNP photodetectors is equivalent to that of the silicon-based photodetectors, [51][52][53][54] and is higher than that of the previous photodetectors of perovskite 48,[55][56][57][58][59][60][61] and other 2D material systems, [62][63][64][65][66][67][68][69][70][71][72] as summarized in Fig. 5e.…”

Gate‐Tunable Photovoltaic Effect in MoTe2 Lateral Homojunction

“…Through the gate modulation, higher D* of around 10 12 Jones under 635 nm and 10 11 Jones under 1064 nm are achieved in unbiased mode irrespective of the light power, which is comparable with the commercially available silicon (D* ≈ 10 11 Jones) and InGaAs based photodiodes (D* ≈ 10 12 Jones). [42,43] The timeresolved dark current is measured at different gates from −40 V to 40 V at a fix V ds = 0 V and with a sampling rate of 20 Hz under exactly the same conditions as the optical measurements. By taking the Fourier transform of dark current traces, we obtained the noise power density, as exhibited in Figure 4c.…”