Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Mikolášek, Miroslav; Fröhlich, K.; Hušeková, K.; Racko, J.; Řeháček, V.; Chymo, Filip; Ťapajna, M.; Harmatha, L.

doi:10.1016/j.apsusc.2018.04.234

Cited by 19 publications

(17 citation statements)

References 34 publications

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“…1) can provide insight on the role of TiO 2 in IMIS performance. The values of V phot = 0.49 V and V op = −0.01 V obtained for reference MIS structure are in accordance with our previously published results [2] and indicate the state-of-the art performance of RuO 2 based MIS structure as well as good reproducibility of our technology. The IMIS structures revealed decreased Vphot from 0.49 to 0.32 V and increased V op from −0.01 to 0.18 V upon the increase of TiO 2 thickness from 0 to 6 nm.…”

Section: Discussionsupporting

confidence: 91%

“…Key part of PEC structures is the catalyst, which support high reaction rate of water oxidation. Recently, we have shown superior performance of RuO 2 / SiO 2 /n-Si compared to Ni/ SiO 2 /n-Si based metal-insulator-semiconductor (MIS) structure, which was achieved due to the high catalytic activity, good transparency, and good interface properties of RuO 2 [2]. To increase the stability of RuO 2 , it is favorable to combine it with highly corrosive resistant TiO 2 to form RuO 2 / TiO 2 bilayer catalytic gate.…”

Section: Introductionmentioning

confidence: 99%

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Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Mikolášek

Fröhlich

Hušeková

et al. 2021

Journal of Electrical Engineering

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This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO2 layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO2. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO2 layer thickness is discussed in the paper. Results revealed that utilization of TiO2 layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.

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Section: Discussionsupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Mikolášek

Fröhlich

Hušeková

et al. 2021

Journal of Electrical Engineering

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“…Many insulators have been utilized in silicon‐based MIS photocatalyst systems. These include SiO 2 ,28–41 TiO 2 ,42–47 HfO 2 ,48,49 Al 2 O 3 ,42,50–53 SrTiO 3 ,54 and ZrO 2. 55 Initially, MIS systems were motivated by their ability to improve the chemical stability of semiconductors, but recently many design strategies have been identified to improve the efficiency of these systems.…”

Section: Introductionmentioning

confidence: 99%

Quantifying Losses and Assessing the Photovoltage Limits in Metal–Insulator–Semiconductor Water Splitting Systems

Hemmerling

Quinn

Linic

2020

Advanced Energy Materials

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Metal–insulator–semiconductor (MIS) photo‐electrocatalysts offer a pathway to stable and efficient solar water splitting. Initially motivated as a strategy to protect the underlying semiconductor photoabsorber from harsh operating conditions, the thickness of the insulator layer in MIS systems has recently been shown to be a critical design parameter which can be tuned to optimize the photovoltage. This study analyzes the underlying mechanism by which the thickness of the insulator layer impacts the performance of MIS photo‐electrocatalysts. A concrete example of an Ir/HfO2/n‐Si MIS system is investigated for the oxygen evolution reaction. The results of combined experiments and modeling suggest that the insulator thickness affects the photovoltage i) favorably by controlling the flux of charge carriers from the semiconductor to the metal electrocatalyst and ii) adversely by introducing nonidealities such as surface defect states which limit the generated photovoltage. It is important to quantify these different mechanisms and suggest avenues for addressing these nonidealities to enable the rational design of MIS systems that can approach the fundamental photovoltage limits. The analysis described in this contribution as well as the strategy toward optimizing the photovoltage are generalizable to other MIS systems.

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“…131 Thus, n-Si/SiO 2 /RuO 2 photoanodes could perform high OER performance. [132][133][134] In addition, non-noble metal and oxide/hydroxide have made outstanding contributions to reduce the overpotential of water oxidation and enhance the | 13 CHENG et al durability of Si-based photoanodes, including the bifunctional Ni-Mo, 90 Ni-Fe, 84,85,117 Fe 3 O 4 , 32 NiO x , 88,122 Co 3 O 4 , 135 NiMoO 4 , 136 and NiOOH. 71,84 And during the OER process, the surface metals are prone to be oxidized and then converted into higher active oxides/hydroxides.…”

Section: Modification Of Oer Cocatalystsmentioning

confidence: 99%

Strategies for improving photoelectrochemical water splitting performance of Si‐based electrodes

Cheng

Zhang

Chen

et al. 2022

Energy Science & Engineering

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Si, as a narrow bandgap semiconductor with a broadband absorption for sunlight, is considered to be a very competitive photoelectrode material for solar-driven photoelectrochemical (PEC) water splitting. However, there are major barriers in construction of efficient and stable Si-based PEC cell, including low photovoltage, sluggish reaction kinetics, and poor stability in electrolytes. This review focuses on the strategies to solve these issues and summarizes recent progress. The working principles of PEC water splitting are first introduced. Then the strategies for improving Si-based photoelectrode performances are discussed, including (1) the regulation of Si surface morphology for enhancing light harvesting, (2) band structure engineering strategies to reduce recombination of photogenerated carriers, and (3) modification of protection layers for long stability and loading cocatalysts on Si-based photoelectrodes for accelerating water splitting. Lastly, we have presented some issues of Si-based photoelectrode materials, which should be addressed in future research.

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Cited by 19 publications

References 34 publications

Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Quantifying Losses and Assessing the Photovoltage Limits in Metal–Insulator–Semiconductor Water Splitting Systems

Strategies for improving photoelectrochemical water splitting performance of Si‐based electrodes

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Cited by 19 publications

References 34 publications

Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

Quantifying Losses and Assessing the Photovoltage Limits in Metal–Insulator–Semiconductor Water Splitting Systems

Strategies for improving photoelectrochemical water splitting performance of Si‐based electrodes

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Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation