2004
DOI: 10.1021/nl049436t
|View full text |Cite
|
Sign up to set email alerts
|

Silicon-based Molecular Electronics

Abstract: Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk silicon bandstructure with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative d… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

5
199
0
2

Year Published

2006
2006
2015
2015

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 203 publications
(206 citation statements)
references
References 34 publications
5
199
0
2
Order By: Relevance
“…(Here, and in what follows we illustrate the theoretical results choosing the parameters at which the calculated currents are in the lA range. Despite this seems high values for a single molecule, nevertheless, such currents are observed for small organic molecules [8,48,54,55].) Fig.…”
Section: Resultsmentioning
confidence: 91%
“…(Here, and in what follows we illustrate the theoretical results choosing the parameters at which the calculated currents are in the lA range. Despite this seems high values for a single molecule, nevertheless, such currents are observed for small organic molecules [8,48,54,55].) Fig.…”
Section: Resultsmentioning
confidence: 91%
“…NDR for styrene and saturated cyclic molecules on Si was reported [26,146,147] and explained with a model, [148] which shows that NDR is expected if the molecular level moves in and out of alignment with the semiconductor energy bands. Such scenario requires that the molecular level be located near the semiconductor forbidden gap, a requirement that is certainly not met by alkanes.…”
Section: Negative Differential Resistance (Ndr)mentioning
confidence: 97%
“…It results from an ability to explicitly separate the mechanical and electronic contributions to the current, which will always be possible for molecules with large HOMO-LUMO gaps and semiconductors where the location of the Fermi energy can be controlled by doping. 13 When combined with the subpicometer control of cryogenic STM, this approach provides snapshots of the dynamics along the reaction coordinate. For molecular electronics, this facilitates a systematic approach to evaluate, in combination with different contacting metals, the performance of candidate molecules in different environments and bonding configurations, and represent an important first step toward the rational design of molecular devices and their operation.…”
mentioning
confidence: 99%