Silicon-based optical waveguide polarizer using photonic band gap

Zhao, Dengtao; Shi, Bin; Fan, Yunfei; Wang, Xun

doi:10.1063/1.1494454

Cited by 10 publications

(3 citation statements)

References 12 publications

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“…Si-based monolithic OEIC technology uses Si-compatible semiconductor technology to integrate optoelectronic devices into Si chips in order to improve chip performance, extend chip function, and reduce costs. Though Si-based photonic devices, such as optical waveguides [ 16 , 17 ], photodetectors [ 18 , 19 , 20 ], optical modulators [ 21 , 22 , 23 ], and optical switches [ 24 , 25 ], have been successfully developed, it is difficult to achieve high-efficiency emission due to the facts that Si is an indirect bandgap semiconductor and its light emission efficiency is about five orders of magnitude lower than that of direct band gap III–V compound semiconductors. Thus, the need for an Si-based high-efficiency light source represents an important technical bottleneck in the development of Si-based monolithic OEICs.…”

Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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“…Here, a 2D PBG crystal consisting of dielectric rods arranged in a square lattice form is designed and used to make a polarizer. A polarizer with a 40 µm long 1D PhC waveguide with a 40 dB extinction ratio has been reported by Zhao et al [24]. Similarly, polarizers with improved extinction ratios have been designed using the 1D PhC waveguide structure [25][26][27].…”

Section: Phc-based Polarization Maintaining Wgsmentioning

confidence: 90%

Recent Progress in Photonic Crystal Devices and Their Applications: A Review

Gangwar,

Pathak,

Kumar

2023

Photonics

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The research field of photonic crystals (PhCs) remains active on a global scale. PhCs, which are periodic optical nanostructures with the characteristics of excellent light field confinement and numerous varying degrees of freedom, provide a solid foundation for controlling the movement of light. Periodic variation of the index of refraction in two or three spatial dimensions with a substantial high-to-low ratio generates a number of intriguing phenomena and enables a variety of potential functionalities. Recently, intriguing devices based on PhCs, such as Y-branches, small-diameter bent waveguides, and miniature resonator cavities, have been proposed and extensively utilized. PhC waveguides are considered ideal candidates for a variety of applications, such as in power splitters, logic gates, sensing and communication fields, etc. These exceptional characteristics may facilitate the development of a dense integrated circuit. However, PhC technology is still relatively new and therefore requires additional effort to fully exploit it. This paper reviews the most popular and essential optical components based on PhCs, including power splitters, modulators, polarization maintaining devices, sensors, and lasers, to summarize the most recent developments relating this hot topic. These devices have superior performance and a smaller footprint compared to conventional photonic devices.

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“…So far, there are many kinds of polarization splitters fabricated by making use of multifarious PBG materials [14][15][16] . Since the TE and TM polarized light modes usually have different band gaps in PBG materials, it is possible to realize the polarization filter by properly adjusting the parameters of PCs.…”

Section: Design Principlesmentioning

confidence: 99%

Utilizing one-dimensional dual-periodical thin-film photonic crystals to design the polarization band-pass filters

Xin

Guo

2005

SPIE Proceedings

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Based on the difference of photonic band structures between TE and TM polarization modes in periodic multiplayer and the combining effect of one-dimensional (1D) hybrid dual-periodical photonic crystals (PCs), a novel method to design polarization band-pass filters used in wavelength division multiplexing system is presented. Such the polarization band-pass filters can be fabricated by dual-periodical TiO 2 /SiO 2 thin film PC structures and theoretical calculation shows that they can have excellent optical properties with TM polarization transmission and TE polarization reflectance. And we try to physically discuss and explain the relation between the parameters of PC heterostructures and the optical characteristics of the filters, such as the number of TM polarization passbands, peak transmittance, half-band width and rejection and so on.

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Silicon-based optical waveguide polarizer using photonic band gap

Cited by 10 publications

References 12 publications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Recent Progress in Photonic Crystal Devices and Their Applications: A Review

Utilizing one-dimensional dual-periodical thin-film photonic crystals to design the polarization band-pass filters

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