Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo, Xianping; Xun, Qian; Li, Zuxin; Du, Shuxin

doi:10.3390/mi10060406

Cited by 84 publications

(45 citation statements)

References 89 publications

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“…These commercial uses have led to well-developed wafer-scale fabrication processes and precise control of doping during single-crystal growth. Concurrently, SiC has generated interest for low-loss nanophotonics, nonlinear optical phenomena, and micro-electromechanical systems (MEMS) [1][2][3] . Recently, SiC has also shown promise as a host for optically addressable spin defects.…”

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confidence: 99%

“…Without a sufficiently strong 905 nm charge reset pulse, the VV 0 may be trapped in a non-radiative charge state for long periods of time, as has been observed in other work 41,42 . (2) (t) autocorrelation measurement of the nanobeam VV 0 , with a best fit (red) including the presence of a nonradiative state and a horizontal line (green) at g (2) = 0.5 indicating the upper threshold for a single emitter. The data contains (2) (0) = 0.096 with no background subtraction and the best fit line gives (2) (0) = 0.079.…”

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Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

et al. 2020

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Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

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Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

et al. 2020

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“…An exciting and expanding area of research in materials science involves the development of wide-bandgap (WBG) semiconductor materials that are used to fabricate micro/nanoelectromechanical systems (MEMS/NEMS) for harsh environment sensing applications [ 1 , 2 ]. A goal is to establish synthesis methods that allow controlling the properties of these materials, such as chemistry, physics, and morphology, and consequently, the performance of the sensors and devices constructed with them.…”

Section: Introductionmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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“…However, compared with Si metal-oxide-semiconductor field-effect transistors (MOSFETs), SiC MOSFETs tend to have a lower short-circuit withstand time due to the smaller chip package and higher current density [12,13]. In addition, the stability of the SiC MOSFETs gate oxide interface is lower owing to the physical structure of the device and the characteristics of the SiC material.…”

Section: Introductionmentioning

confidence: 99%

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Qin

Xun

et al. 2019

Electronics

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Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

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Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Cited by 84 publications

References 89 publications

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

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