Silicon carbide GTOs: static and dynamic characterization

Elasser, Ahmed; Park, J.; Clock, A.W.; Arthur, Steve; Ghezzo, M.; Kretchmer, J.; Fedison, J.B.; Chow, T. Paul

doi:10.1109/ias.2001.955443

Cited by 4 publications

(1 citation statement)

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“…Therefore, the SM-JTE and ESZ-JTE designs are benchmarked in the following section. It should be kept in mind that the SiC material quality has evolved significantly during the last decades, as the chip size, drift thickness and blocking capability have increased from 1x1mm 2 , 12 µm, and 3 kV, respectively, in 2001 [51], 10x20 mm 2 , 160 µm and 20 kV, respectively, in 2013 [20], to 3.5x3.5 mm 2 , 230 µm and 26.8 kV, respectively, in 2020 [8]. The development of epitaxial growth methods has enabled high growth speeds (i.e., > 100 µm/h [52]) and with low levels of critical traps and dislocations (i.e., deep-level trap density < 1×10 11 cm -3 [52]).…”

Section: B Single-zone Negative-bevel Jte and Single-zone Etched-step Jte Designs For Ultrahigh-voltage Devicesmentioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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