Silicon Carbide Membranes Modified by Chemical Vapor Deposition Using Species of Low Sticking Coefficients in a Silane/Acetylene Reaction System

Abstract

Asymmetric SiC membranes are modified by a SiH 4 /C 2 H 2 / Ar low-pressure chemical vapor deposition (LPCVD) system at a temperature of 800°C. The pore size of the membrane is reduced to increase its selectivity at the expense of its permeance. The chemical vapor deposition (CVD) modification, using a chamber to minimize the gas-phase reaction, is superior to that without a chamber, because the film-forming species of low sticking coefficients can improve the pore size at a lower cost of permeance reduction. With the knowledge of pore structure and CVD kinetics, the alteration of membrane properties can be properly predicted.

Microstructure and Mechanical Properties of Compact SiC/SiC Composite Fabricated with an Infiltrative Liquid Precursor

“…Silicon carbide (SiC) has been considered as a promising material for high‐temperature applications including gas turbines and aerospace propulsion systems, nuclear reactors, high‐temperature semiconducting devices, membranes, and catalyst carriers owing to its attractive properties such as high Young's modulus and hardness, excellent thermal and chemical stability . Consolidated SiC ceramics are usually prepared by various sintering techniques and polymer‐deriving methods.…”