Silicon Carbide Multi-Chip Power Module for Traction Inverter Applications: Thermal Characterization and Modeling

Calabretta, Michele; Sitta, Alessandro; Oliveri, Salvatore Massimo; Sequenzia, Gaetano

doi:10.1109/access.2021.3080505

Cited by 14 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In terms of power circuit simplicity 2LMV approach is the most convenient, the parasitic inductance and switching conditions are as good as the module packaging [35,36] and busbar design [28]. As recent SiC MOSFET modules are improved compared to previous versions and the layout of this half-bridge is not challenging, the results in Fig.…”

Section: B Power Layout -Parasitic Inductancesmentioning

confidence: 99%

Medium Voltage Power Switch in Silicon Carbide—A Comparative Study

et al. 2022

View full text Add to dashboard Cite

This paper discusses various solutions of energy conversion in medium voltage using power switches in Silicon Carbide (SiC) technology. In particular, a comparative study is focused on four different variants of an inverter phase leg operating at 1.5 kV DC, which has not been presented in the literature yet. The first one is based on a standard two-level half-bridge built from a 3.3 kV SiC MOSFET power module rated at 450 A. Then, the two-level solution with series-connected devices inside 1.2 kV/450 A power modules is taken into account. Finally, a flying-capacitor phase leg also based on the same 1.2 kV devices is investigated in two different modes: a standard three-level operation and quasi-two-level mode with a significantly reduced capacitor. The presented study is founded on in-depth experiments: all four phase legs were designed, built, and tested in the laboratory. All versions were connected in a half-bridge configuration with an inductive load. Tests were conducted under identical conditions to test the overall performance and switching behavior for various gate resistances. In addition, different aspects are analyzed and compared in this paper, including parasitics, cooling performance, gate drivers and layout considerations, providing selection guidelines for power switches with SiC power devices in medium voltage power electronics applications.INDEX TERMS medium voltage, power converters, power electronics, power MOSFETs, silicon carbide.

show abstract

Section: B Power Layout -Parasitic Inductancesmentioning

confidence: 99%