Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

Sambonsuge, Shota; Nikitina, L. N.; Hervieu, Yu. Yu.; Suemitsu, Maki; Filimonov, Sergey N.

doi:10.1007/s11182-014-0197-7

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…Step ⑤ requires the grow of SiC on a patterned Si(110) surface. Few papers in the literature address specifically the control of the final orientation of SiC grown on Si(110) [4,5] but it is known that the growth of SiC on Si(110) surface can lead to different SiC orientations. Presently, we focus on the role of the introduction temperature of the propane during the thermal ramp up prior to the epitaxial stage.…”

Section: Cvd Growth Stepsmentioning

confidence: 99%

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

Portail

Chenot

Ghorbanzadeh-Bariran

et al. 2022

MSF

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We present an epitaxy-based approach for designing a 3C-SiC Capacitive Micromachined Ultrasonic Transducer (CMUT). The design requires to consider a 3C-SiC/Si/3C-SiC heterostructure on a Si substrate. This implies to address different growth steps of SiC on Si and Si on SiC. We present some specific growth related issued, namely the control of selectively grown Si on a masked SiC(100) and the further regrowth of 3C-SiC on a Si (110) layer. The final release of the SiC membrane, to define a CMUT, is also addressed using a simple thermal treatment allowing to suppress several technological steps.

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Section: Cvd Growth Stepsmentioning

confidence: 99%

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

Portail

Chenot

Ghorbanzadeh-Bariran

et al. 2022

MSF

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“…Sanbonsuge reported 3C-SiC (110) and 3C-SiC (111) epi-growth on Si (110) substrate by MBE method. 20 Sanbonsuge also attributed the formation of 3C-SiC (110) epi-growth to the roughness at the 3C-SiC (110)/Si (110) interface. 21 But the XRD observation showed 3C-SiC epitaxial films grew along <110> orientation on Si (110) substrate with some inclusions of <111> domains.…”

Section: Introductionmentioning

confidence: 97%

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

Sun

Yang

et al. 2019

J Am Ceram Soc

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Previously, we found 3C-SiC films favor to grow in <111> orientation on Si (110) (https://doi.org/10.1111/jace.15260). However, epitaxial growth of thick <110>-3C-SiC is still a big challenge. In this study, thick 3C-SiC (110) epitaxial films were prepared on Si (110) substrate by laser chemical vapor deposition (LCVD) using hexamethyldisilane (HMDS) in H 2 atmosphere. The investigation of growth mechanism showed that the laser of LCVD played an important role during the depositions. Observation by high-resolution transmission electron microscopy (HRTEM) revealed that the interface of 3C-SiC (110)/Si (110) exhibited rough texture at atomic level. The atomic roughness on Si (110) surface could be a key factor for 3C-SiC (110) nucleation. The growth of thick 3C-SiC (110) epitaxial films could be very promising for new development in power electronics applications.

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“…What is still missing is the information on the absolute surface energies of polar 3C-SiC surfaces. Recently we have partially filled this blank by first-principles density functional theory (DFT) calculations of the absolute surface energies of clean and hydrogen covered nonreconstructed 3C-SiC(110) and (111) surfaces [2]. Here we complete this work by reporting calculation results for reconstructed 3C-SiC(001) and (111) surfaces.…”

Section: Introductionmentioning

confidence: 99%

<i>Ab Initio</i> Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces

Filimonov

2015

MSF

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The absolute surface energies of three major low index surfaces of cubic silicon carbide (3C-SiC) are determined by first-principles density functional theory calculations. Calculations show that among clean 3C-SiC surfaces the Si-terminated 3C-SiC(001)-(3x2) surface has the lowest energy. The second and third lowest energy surfaces are the Si-terminated 3C-SiC(111)-(√3x√3) surface and the nonreconstructed 3C-SiC(110) surface. Hydrogen passivation greatly reduces both the absolute surface energies of the low index 3C-SiC surfaces and the surface energy anisotropy. In particular, the surface energies of fully passivated 3C-SiC(110) and (111) surfaces become indistinguishable at hydrogen-rich deposition conditions.

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Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

Cited by 7 publications

References 17 publications

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

<i>Ab Initio</i> Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces

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