2020
DOI: 10.11591/ijpeds.v11.i4.pp2194-2202
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Silicon carbide power device characteristics, applications and challenges: an overview

Abstract: Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC pr… Show more

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Cited by 10 publications
(5 citation statements)
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“…๐‘ƒ ๐‘๐‘œ๐‘Ÿ๐‘’ = ๐‘ƒ ๐‘ฃ ๐‘‰๐‘‚๐ฟ ๐ฟ (15) From the data collected, the inductor loss is calculated using (15), where ๐‘ƒ ๐‘๐‘œ๐‘Ÿ๐‘’ is the power dissipated in the magnetic core, and ๐‘‰๐‘‚๐ฟ ๐ฟ is the inductor volume given in mยณ.…”
Section: Losses Analysis For the Implemeted Boost Convertersmentioning
confidence: 99%
See 1 more Smart Citation
“…๐‘ƒ ๐‘๐‘œ๐‘Ÿ๐‘’ = ๐‘ƒ ๐‘ฃ ๐‘‰๐‘‚๐ฟ ๐ฟ (15) From the data collected, the inductor loss is calculated using (15), where ๐‘ƒ ๐‘๐‘œ๐‘Ÿ๐‘’ is the power dissipated in the magnetic core, and ๐‘‰๐‘‚๐ฟ ๐ฟ is the inductor volume given in mยณ.…”
Section: Losses Analysis For the Implemeted Boost Convertersmentioning
confidence: 99%
“…Despite the advantages of WBG technologies, the high switching frequencies, added to the high power processing levels, can accentuate the EMI [2], [7], 1952 [8]. Several previous studies reported in [4], [5], [9]- [15] prove the effective gain in performance when WBG semiconductor devices are applied in power electronics converters, encouraging their increasing application in the industrial and academic environment. Additionally, recent studies concerning the deployment of SiC [16]- [21] and GaN [22], [23] technologies in several applications, the latter being used in high-power devices, as reported in [24].…”
Section: Introductionmentioning
confidence: 99%
“…Silicon-based power semiconductor devices have reached their physical limits due to their restrictions on device size and their physical characteristics. Although the switching losses in power devices can be reduced by applying technologies like soft switching, the large gate parasitic capacitance of silicon-based devices limits the optimization of energy loss, which affects the performance of power converters under high-input-voltage and high-frequency conditions [1]. Wide-bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have been demonstrated to offer excellent features compared to silicon.…”
Section: Introductionmentioning
confidence: 99%
“…In recent decades, the demand for energy has escalated exponentially driven by the growing population and increasing wealth across the globe. Hence, green energy harvested from an inexhaustible source such as solar, wind, and tide have attracted enormous attention [1], [2]. Since the distributed power generation systems became mainstream, grid-connected microinverters turned to be a research hotspot.…”
Section: Introductionmentioning
confidence: 99%