Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

Rąbkowski, Jacek; Peftitsis, Dimosthenis; Nee, Hans‐Peter

doi:10.1109/mie.2012.2193291

Cited by 361 publications

(128 citation statements)

References 36 publications

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“…Meade conducted a detailed study on the parasitic problem in 2008 [3]. A simple DC-DC converter topology was chosen to demonstrate the effect of parasitic loop inductances on electrical performance.…”

Section: Requirements Of Silicon Carbide Packagingmentioning

confidence: 99%

“…SiC power devices have been predicted to have tremendous potential to be the next generation material in the semiconductor industry [1][2][3][19][20][21]. These devices have been shown to operate in extremely high ambient temperatures with very low degradation in performance [22].…”

Section: Trends In Wire Bonded Silicon Carbide Packagingmentioning

confidence: 99%

“…These have the benefits of enabling a high power density at high junction temperatures, coupled with faster switching speeds as compared with their silicon (Si) counterparts [1][2][3][4][5][6]. Thus far, silicon carbide (SiC) [1][2][3] and gallium nitride (GaN) [4][5][6] have been the materials of choice for most WBG modules. While GaN is the preferred choice in applications requiring <500 V, SiC excels in applications exceeding 900 V. SiC devices rated 900 V and above are available in chip sizes spanning just tens of square millimeters.…”

Section: Introductionmentioning

confidence: 99%

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High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

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Section: Requirements Of Silicon Carbide Packagingmentioning

confidence: 99%

Section: Trends In Wire Bonded Silicon Carbide Packagingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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“…The technology of silicon carbide (SiC) power devices is facing a rapid development in recent years and, in consequence, the area of its application is continuously extending [1,2]. New diodes and transistors (unipolar JFETs and MOSFETs, as well as bipolar BJTs), available mostly in 1200 V and 1700 V voltage class, can be applied in three-phase converters rated up to several tens of kVAs [2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…New diodes and transistors (unipolar JFETs and MOSFETs, as well as bipolar BJTs), available mostly in 1200 V and 1700 V voltage class, can be applied in three-phase converters rated up to several tens of kVAs [2][3][4][5][6][7][8][9][10][11][12]. This field is nowadays dominated by well-established technology of silicon IGBTs, which show different properties in comparison to new SiC power devices.…”

Section: Introductionmentioning

confidence: 99%

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Rąbkowski¹,

Płatek²

2016

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to popular IGBT converters, a negative switch current is capable of flowing through the reverse conducting transistor, which results in different distribution of power losses among the devices. Thus, equations describing the conduction power losses of the transistor and diode are improved and verified by means of circuit simulations in Saber. Moreover, a comparison of power losses calculated with the use of standard and new equations is also shown. Total power losses in three SiC MOSFET modules of a 50 kVA converter operating at 20 kHz are up to 30% lower when reverse conduction is taken into account. This shows the importance of the discussed problem and proves that much better accuracy in the estimation of power losses and junction temperatures of SiC devices may be obtained with the proposed approach.

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