Silicon crystal fibers: difficulties and progress

Abstract

In this work difficulties and the progress in growing Silicon fibers by µ-PD technique have been reported. Some main instability growth problems have been solved. Smooth temperature gradient is obtained for longer distance in and under the hot zone part by making an effective change in our hot zone. Also we obtained temperature stabilization as good as 0.2 K. The level of impurities was minimized by using etching and baking processes.