Silicon deposition in nanopores using a liquid precursor

Masuda, Takashi; Tatsuda, Narihito; Yano, Koichiro; Shimoda, Tatsuya

doi:10.1038/srep37689

Cited by 7 publications

(15 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[94] Although CC can cause agglomeration and aggregate restructuring processes with both gas [95,96] and liquid [97] carrier fluids, methods based on capillary condensation have been successfully used to increase the mechanical stability of fragile structures against mechanical impacts or capillary forces from other liquids. [51,98] Within the resolution limits of the chosen analysis methods, CC is also applicable with nanopillars standing on glue, [31] porous carbon spheres, [71,99] and loose particle aggregates or their beds without losing their packing-dependent functionalities. [15,51,100,101] Therefore, capillary condensation should not be presumed to always cause relevant structural damage.…”

Section: Managing Capillary Forcesmentioning

confidence: 99%

“…The literature does not present much data about such structural damage. However, it presents process features that could be interpreted as modes of failure from densification during fixation: tiny pores or channels inside the pore filler [71] or fillings that were detached from the pore walls. [125] It is important to notice that also other vapor deposition techniques inflict forces on the substrate, [126,127] and that preventing this persistent problem is still under intense research in the field.…”

Section: Managing Capillary Forcesmentioning

confidence: 99%

“…Nonuniform nomenclature or lack of any naming makes it challenging to follow the progress on the CC applied in the field. New proposed names for CC-assisted VD include capillary/curvature selective vapor deposition (CSVD), [31] liquidsource vapor deposition (LVD), [71,129] sequential polymerization initiated chemical vapor deposition (SP-iCVD), [68] and capillary enhanced grafting. [130] Most authors give no name to the method or use a more generic name based on their reactor setup.…”

Section: Nomenclature and Disambiguation In The Fieldmentioning

confidence: 99%

“…The initial deposition was conducted either by contacting liquid cyclopentasilane with the substrate, [129] meaning that there would also be imbibition present, or purely via the vapor phase. [71,99] A 1,2-hydrogen shift reaction solidified the liquid when the chamber temperature was increased from 120 °C to 150 °C. The solidified matter was subsequently turned into silicon by heating the chamber to 400 °C.…”

Section: Processes: Initiation Reagents and Substratesmentioning

confidence: 99%

See 3 more Smart Citations

Condensation‐Controlled Toposelective Vapor Deposition in Nano‐ and Microcavities: Theory, Methods, Applications, and Related Technologies

Lovikka¹

2022

Adv Materials Inter

View full text Add to dashboard Cite

fabricable while we are facing increasing complexity in, for example, microelectronics. [6,7] For these reasons, challenges such as bad pattern alignment, [8,9] or pinch-off of pores and void formation [10][11][12][13] in top-down fabrication need to be addressed. On the other hand, a continuous film causes tradeoffs in desirable properties in many nanotechnological applications, such as losing mesoporosity while increasing the mechanical properties of an aerogel [14] or reducing catalytic activity while increasing catalyst stability against sintering. [15] To counter these problems, even atomic layer deposition (ALD), a method known for its superior conformality, has been expanded into area-selective fabrication by the addition of etching and functionalization steps in the workflow. [16][17][18][19] However, additional steps make the workflow increasingly slow, complex, and dependent on surface chemistries. There is also a growing interest in area-selectivity based on properties of precursors and substrates in ALD, [20] but new requirements on precursors would narrow down potential reagents. Furthermore, even conformal methods would leave voids inside ink-bottle-shaped pores and under composite undercuts [21] because conformal methods would clog the pore mouths before filling the internal parts. These problems have very recently revoked calls for profound changes and even a paradigm shift toward selective functionalization in the nanoscale. [18,20,[22][23][24][25] Special attention should be paid to inherently non-conformal methods, especially if they are surface-selective towards cavities. This includes both surface-selective subconformal coatings, those that coat only extremities and protrusions of a substrate, and surface-selective superconformal coatings, those that fill or coat cavities.Bottom-up approaches could eliminate the aforementioned problems while reducing the needed steps for surface-selective treatments-instead of breaking or carving things smaller and using miniaturized techniques (top-down), coatings could be grown self-aligning (bottom-up). One bottom-up category is surface-shape-selective deposition. Currently, this category has limited approaches, which are often based on either anisotropic processes such as directional plasma etching [26] or reagent flux, force fields, [27] competitive adsorption, [28] or reagents and additives with specific properties. [22] Truly bottom-up gap-filling technologies, especially those free of line-of-sight limitations, Nanotechnology drives technological progress in many frontiers, from electronics to medicine, from tougher composites to adaptive surfaces. As the feature sizes are made smaller, the importance of surfaces is increased. Many of the most powerful methods for surface manipulation are variants of vapor deposition (VD). However, VD is typically not surface-selective and, therefore, extra work steps are needed to integrate the methods into nanofabrication routines. Furthermore, many fields are moving toward 3D nanostructures, which unavoidably means...

show abstract

Section: Managing Capillary Forcesmentioning

confidence: 99%

Section: Managing Capillary Forcesmentioning

confidence: 99%

Section: Nomenclature and Disambiguation In The Fieldmentioning

confidence: 99%

Section: Processes: Initiation Reagents and Substratesmentioning

confidence: 99%

See 2 more Smart Citations

Condensation‐Controlled Toposelective Vapor Deposition in Nano‐ and Microcavities: Theory, Methods, Applications, and Related Technologies

Lovikka¹

2022

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…[ 2 ] The DTG curve exhibits broad peaks at 130 and 300 °C. The peak at 130 °C is due to the evaporation of residual CPS [ 25 ] and polysilanes with smaller Mw. At 300 °C, in addition to the desorption of large amounts of gaseous fractions, the polysilane film changes from transparent to yellow.…”

Section: Figurementioning

confidence: 99%

Inkjet Printing of Liquid Silicon

Masuda

Nakayama

Saito

et al. 2020

Macromol. Rapid Commun.

Self Cite

View full text Add to dashboard Cite

A precursor solution for semiconducting Si called liquid Si (liq‐Si) is synthesized, and semiconducting Si is inkjet‐printed. Satisfactory inkjet discharge is achieved using liq‐Si consisting of liquid‐phase polysilane with an average molecular weight of 2500 g mol−1. The printed liq‐Si is converted into amorphous Si by heating at 400 °C. The resulting Si film has a flat surface with a root‐mean‐square roughness of 0.8 nm. These results are extended to n‐ and p‐type Si films by synthesizing liq‐Si chemically doped with P and B compounds, respectively. Liq‐Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.

show abstract