Silicon Device Processing

Abstract

The sections in this article are Introduction Gettering Intrinsic Gettering Gettering by Hydrogen Annealing Device Isolation LOCOS ‐Based Isolation Advanced Isolation Techniques Silicon‐on‐Insulator Gate Dielectrics Preoxidation Cleaning Process Dependence of Gate Oxide Quality Chemically Modified Gate Oxides CVD and Stacked Oxides Shallow Junction Formation Ion Implantation Advanced Techniques for p + ‐ n Junction Formation Diffusion from Doped Deposited Layers Gas Immersion Laser Doping Gas Phase Diffusion Plasma Immersion Ion Implantation Metallization Gate Electrodes Contacts Interconnections Planarization for Multilevel Interconnections Cluster Tool Technology Advantages Rapid Thermal Processing In Situ Dry Cleaning Interface Engineering Gate Stack of Oxide and Oxynitride Deposition of DRAM Storage Dielectrics Selective Deposition Processes Ultra‐Shallow Junction Formation Integrated CMOS Processing Based on RTP Ge x Si 1− x / Si Heteroepitaxy by RT ‐ CVD Single‐Wafer Integrated Processing