1962
DOI: 10.1063/1.1931164
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Silicon Diffused-Element Piezoresistive Diaphragms

Abstract: The properties of a pressure transducer consisting of a single-crystal silicon diaphragm having stress-sensitive piezoresistive regions formed by the localized diffusion of impurities have been theoretically and experimentally investigated. The longitudinal and transverse piezoresistance effects are discussed and the results are applied to the stress pattern of a deformed diaphragm. The conditions under which the stress in the diaphragm varies linearly with applied pressure are discussed and good agreement bet… Show more

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Cited by 259 publications
(76 citation statements)
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“…The interest from industry is due to the large piezoresistive response of silicon that favors a large sensitivity of microelectromechanical system ͑MEMS͒ sensors. 2 The academic focus is due to scarcity of reliable experimental results and disagreement between measurements and theoretical models, especially in p-type silicon. Yet another important issue is that the results from the theoretical models need to be available in a form that is directly usable for experimentalists.…”
Section: Introductionmentioning
confidence: 99%
“…The interest from industry is due to the large piezoresistive response of silicon that favors a large sensitivity of microelectromechanical system ͑MEMS͒ sensors. 2 The academic focus is due to scarcity of reliable experimental results and disagreement between measurements and theoretical models, especially in p-type silicon. Yet another important issue is that the results from the theoretical models need to be available in a form that is directly usable for experimentalists.…”
Section: Introductionmentioning
confidence: 99%
“…Many types of transducers have incorporated piezoresistive detection, including pressure sensors 17,18 and accelerometers.…”
Section: Device Fabricationmentioning
confidence: 99%
“…Owing to the excellent electromechanical properties of Si and the availability of integrated-circuit-compatible CMOS processes [2], the Si PZR effect has been widely used in many sensor applications such as pressure sensors [3], accelerometers [4,5], and biological sensors [6]. In general, the PZR effect is created by the modification of energy band structures by applied strain, thereby leading to changes in the effective mass, mobility, and conductivity [7].…”
Section: Introductionmentioning
confidence: 99%