Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region

Borblik, V. L.; Kulish, N. R.; Sokolov, V. N.; Shwarts, Yu. M.; Venger, É. F.

doi:10.1016/s0924-4247(98)00361-6

Cited by 29 publications

(12 citation statements)

References 8 publications

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“…Under conditions of high-level doping, the base conductivity becomes metallic and current carriers do not freeze-out at any temperatures. Herewith in [1], we observed a continuous decrease in the temperature sensitivity of such a sensor with temperature lowering connected with the domination of the tunnel component in the diode current under such conditions (heavy doping, low temperatures) (we are talking here about the so-called excess tunnel current [2] rather than the direct interband tunneling).…”

Section: Introductionmentioning

confidence: 83%

“…In [1], we have shown that, by means of the heavy doping of the base of a silicon thermodiode, one can get rid of a sharp kink in its response curve at temperatures near 40 K connected with the freezing-out of free current carriers into impurities. Under conditions of high-level doping, the base conductivity becomes metallic and current carriers do not freeze-out at any temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region

Borblik¹

2007

Semicond. phys. quantum electron. optoelectron.

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Heavily doped silicon diodes of n ++-p + type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop across the diode during the passage of a constant current, T is the temperature) reproduces the Mott law (with opposite sign in the exponent), and the temperature sensitivity of such sensors after passing through a minimum (as the temperature is lowered) increases again up to the values typical of room temperature.

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Section: Introductionmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region

Borblik¹

2007

Semicond. phys. quantum electron. optoelectron.

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“…As a result, the contribution of j sn in the expression for CVC (1), with a good accuracy, may not be taken into consideration. For instance, for the sensors [21], in which diode n + p structures are used as a sensitive element, the ratio of the acceptor concentration (~2⋅10 17 cm 3 ) to the donor one (~10 20 cm 3 ) constitutes 0.2 %. The contribution of the diffusion current of electrons to the TRC of the sensor will be yet less considerable, since the TRC corresponding to the CVC (1) is changed on a logarithmic law with the change of the j s value:…”

Section: Qualitative Analysismentioning

confidence: 99%

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

Sokolov¹

2002

Semicond. Phys. Quantum Electron. Optoelectron.

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A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The currentvoltage characteristic, from which the temperature response curve can be obtained, has been calculated using the model of a one-dimensional exponentially graded pn junction with uniformly doped base region and the diffusion current of the minority carriers through the pn junction. We show that depending on the doping gradient both contributions to the current coming from the electron and hole current components appear to be of the same order of magnitude. That is in contrast to the prediction of the widely used asymmetrical step junction model. It follows from numerical calculations that an effective shift of the temperature response curve due to nonuniformly doped emitter region in the temperature equivalent can reach the value of about 20 K. The limiting temperature T m in the temperature response curve that restricts its extent into the high temperature range has been analyzed depending on the excitation current, the doping concentration of the base, and the pn junction depth.

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“…When the doping level of the diode base is high enough (i.e., the impurity concentration exceeds the critical value for dielectric-metal transition), one can avoid this problem, as it has been shown by us in a number of papers [2][3][4][5]. In this case, any instability does not appear, the diode resistance is completely determined by resistance of the p-n junction, and the current voltage characteristics demonstrate predominance of the excess tunnel current (via certain localized states in the forbidden band of semiconductor, as it has been accepted to believe [6,7]).…”

Section: Introductionmentioning

confidence: 99%

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

Borblik¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) has been analyzed. In addition to previous investigations of the influence of magnetic fields up to 9.4 T on this tunnel current at 4.2 K, now the measurements have been carried out up to 14 T at temperatures lower than the liquid helium temperature. Under these conditions, the transfer to saturation of the diode magnetoresistance was observed, which agrees with the results predicted theoretically for the hopping conduction via impurity centers in high magnetic fields.

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Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region

Cited by 29 publications

References 8 publications

Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region

Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

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