Silicon drift detectors for high resolution room temperature X-ray spectroscopy

Lechner, P.; Eckbauer, S.; Hartmann, R.; Krisch, S.; Hauff, D.; Richter, R.; Soltau, H.; Strüder, L.; Fiorini, C.; Gatti, E.; Longoni, A.; Sampietro, Marco

doi:10.1016/0168-9002(96)00210-0

Cited by 311 publications

(104 citation statements)

References 4 publications

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“…To simplify the fabrication technology, the strip system is replaced by a large area pn-junction at one side, which is used as a very homogeneous thin entrance window for the radiation (Kemmer et al, 1987;Lechner et al, 1996). A further improvement of this type of drift chamber uses cylindrical drift electrodes which force the signal electrons to a very small anode in the centre of the device from where they are transferred to the gate of an integrated JFET (see Fig.…”

Section: Silicon Drift Chamber Principlementioning

confidence: 99%

High-Resolution High-Count-Rate X-ray Spectroscopy with State-of-the-Art Silicon Detectors

Strüder

Fiorini

Gatti

et al. 1998

J Synchrotron Radiat

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For the European X-ray multi-mirror (XMM) satellite mission and the German X-ray satellite ABRIXAS, fully depleted pn-CCDs have been fabricated, enabling high-speed low-noise positionresolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm 2 . At 150 K it has a noise of 4 e À r.m.s., with a readout time of the total focal plane array of 4 ms. The maximum count rate for single-photon counting was 10 5 counts s À1 under at-®eld conditions. In the integration mode more than 10 9 counts s À1 can be detected at 6 keV. Its position resolution is of the order of 100 mm. The quantum ef®ciency is higher than 90% from carbon K X-rays (277 eV) up to 10 keV. New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip ampli®er system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface-generated leakage current. At count rates as high as 2 Â 10 6 counts cm À2 s À1 , they still show excellent spectroscopic behaviour at room-temperature operation in single-photon detection mode. The energy resolution at room temperature is 220 eV at 6 keV X-ray energy and 140 eV at 253 K, being achieved with Peltier coolers. These systems were operated at synchrotron light sources (ESRF, HASYLAB and NLS) as X-ray¯uorescence spectrometers in scanning electron microscopes and as ultra low noise photodiodes. The operation of a multi-channel silicon drift detector system is already foreseen at synchrotron light sources for X-ray holography experiments. All systems are fabricated in planar technology having the detector and ampli®ers monolithically integrated on high-resistivity silicon.

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Section: Silicon Drift Chamber Principlementioning

confidence: 99%

High-Resolution High-Count-Rate X-ray Spectroscopy with State-of-the-Art Silicon Detectors

Strüder

Fiorini

Gatti

et al. 1998

J Synchrotron Radiat

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“…The 122 keV energy peak at the optimum bias scheme is symmetric and no strong tailing effect on the low energy side which is reported to appear in CZT detectors due to hole trapping at high energies [3], [6] is seen. However, at reduced lateral field (-70,-140,-210) V, the 122 keV photopeak cannot be resolved and at (-210,-420,-630) V a large number of events occurs at low energy side of the peak causing the tail effect that appears in the 122 keV 57 Co spectrum, see Figure ( 8). In contrast, the same improvement could be expected for the 137 Cs 662 keV spectrum by increasing the lateral field however due to its higher average penetration depth , the peak cannot be resolved except for the highest lateral field value (-500,-600,-700) V see Figure (9).…”

Section: Performance Characteristics Using Different γ-Ray Energiesmentioning

confidence: 99%

Development of a CZT drift ring detector for X and γ ray spectroscopy

Alruhaili¹,

Sellin²,

Lohstroh³

et al. 2015

J. Inst.

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CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 KeV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

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“…For an avalanche photodiode, taking into account the internal gain M and the statistical fluctuation of the gain reflected by the is given by [ 121: excess noise factor P ( P = Mo.28 [E]), the energy resolution When a detector is coupled to a scintillator crystal, the energy resolution (in relative FWHM) is given by [21]: (4) where Rd is the detector resolution described by the equations (2) and (3), R, the scintillator resolution, Ri the intrinsic resolution reflecting the non-proportionality and the inhomogeneity of the scintillator and Rp the transfer resolution.…”

Section: Noise and Energy Resolution Considerationsmentioning

confidence: 99%

Comparative study of silicon detectors

Allier

Valk

Huizenga

et al.

1997 IEEE Nuclear Science Symposium Conference Record

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the signal is low because, except for the avalanche photodiode, We studied three different types of silicon sensors: PIN diodes, circular drift detectors, both made at the Delft University of Technology (DUT), and Hamamatsu S5345 avalanche photodiodes. Measurements have been carried out in the same optimized experimental setup, both at room temperature and at low temperatures. Comparison is made for direct X-ray detection and CsI(T1) scintillation light readout.

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Silicon drift detectors for high resolution room temperature X-ray spectroscopy

Cited by 311 publications

References 4 publications

High-Resolution High-Count-Rate X-ray Spectroscopy with State-of-the-Art Silicon Detectors

High-Resolution High-Count-Rate X-ray Spectroscopy with State-of-the-Art Silicon Detectors

Development of a CZT drift ring detector for X and γ ray spectroscopy

Comparative study of silicon detectors

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