2014
DOI: 10.1109/tcad.2014.2359578
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Silicon Effect-Aware Full-Chip Extraction and Mitigation of TSV-to-TSV Coupling

Abstract: This paper presents a silicon effect-aware multiTSV model. Through-silicon-via (TSV) depletion region, silicon substrate discharging path and electrical field distribution around TSV neighbor are modeled and studied in full-chip design. Verification with field solver and full-chip TSV-to-TSV coupling analysis in both the worst case and the average case show this model is accurate and efficient. It is found that 3-D nets receive more noise than their 2-D counterparts due to TSV-to-TSV coupling. To alleviate thi… Show more

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Cited by 33 publications
(7 citation statements)
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“…Since the capacitances of the C matrix are heterogeneous [5,10], the assignment of the logical bits to the TSVs affects the power consumption. Moreover, a fixed inversion of some of the logical bits before the transmission may potentially decrease the T entries.…”
Section: Preliminaries: Tsv Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Since the capacitances of the C matrix are heterogeneous [5,10], the assignment of the logical bits to the TSVs affects the power consumption. Moreover, a fixed inversion of some of the logical bits before the transmission may potentially decrease the T entries.…”
Section: Preliminaries: Tsv Modelmentioning
confidence: 99%
“…metal-wire pair has the same size. In contrast, TSVs have a maximum of eight adjacent neighbors and due to the different distances between direct and diagonal adjacent neighbors, combined with the E-field sharing effect [10], several capacitance values exist in a TSV array [5]. Hence, traditional low-power coding techniques are not directly applicable for TSV arrays.…”
mentioning
confidence: 99%
“…3-D ICs are becoming a good solution to continue Moore's law. TSV is a popular choice to implement the vertical connections between dies in 3-D ICs [2]. 3-D ICs has shorter global interconnect due to the short length of TSV and the flexibility of vertical routing, leading to higher performance and lower power consumption of interconnects [3].…”
Section: Introductionmentioning
confidence: 99%
“…Several prior works [57][58][59][60][61][62][63][64] have analyzed coupling noise in 3D interconnects due to big-size TSVs. These studies focus on the placement stage, where the relative position of blocks and TSVs is fixed.…”
Section: Previous Workmentioning
confidence: 99%
“…Increasing TSV pitch is a commonly used technique for minimizing coupling noise in 3D circuits [58][59][60][61][62][63]. Previous works have either used force-directed algorithm to increase the KOZ around TSVs [58], or spreading the TSVs apart [59][60][61] to minimize TSV-to-TSV coupling. Both of these techniques will depend on the whitespace distribution around victim TSVs and therefore, offer limited solution quality.…”
Section: Nonuniform Tsv Pitchmentioning
confidence: 99%